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参数资料
| 型号： | MTP60N06HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 1/8页 |
| 文件大小： | 223K |
| 代理商： | MTP60N06HD |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTP60N06HD/D
MTP60N06HD
Preferred Device
Power MOSFET
60 Amps, 60 Volts
NChannel TO220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 MΩ)
VDGR
60
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current Continuous
Continuous @ 100°C
Single Pulse (tp ≤ 10 μs)
ID
IDM
60
42.3
180
Adc
Apk
Total Power Dissipation
Derate above 25°C
PD
150
1.0
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
EAS
540
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
RθJC
RθJA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
°C
60 AMPERES
60 VOLTS
RDS(on) = 14 mΩ
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP60N06HD
TO220AB
50 Units/Rail
TO220AB
CASE 221A
STYLE 5
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
MTP60N06HD = Device Code
LL
= Location Code
Y
= Year
WW
= Work Week
MTP60N06HD
LLYWW
1
Gate
3
Source
4
Drain
2
Drain
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相关代理商/技术参数 |
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| MTP60N06HD_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| MTP610U | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:MODULAR TELEPHONE PLUGS |
| MTP610W | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:MODULAR TELEPHONE PLUGS |
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