参数资料
型号: MTP60N06HD
厂商: ON SEMICONDUCTOR
元件分类: JFETs
英文描述: 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封装: CASE 221A-09, 3 PIN
文件页数: 3/8页
文件大小: 223K
代理商: MTP60N06HD
MTP60N06HD
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAINT
OSOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (Amps)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAINTOSOURCE VOLTAGE (Volts)
I DSS
,LEAKAGE
(nA)
ID, DRAIN CURRENT (Amps)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAINTOSOURCE VOLTAGE (Volts)
VGS, GATETOSOURCE VOLTAGE (Volts)
I D
,DRAIN
CURRENT
(AMPS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
0
1.0
2.0
3.0
4.0
5.0
0.5
1.5
2.5
3.5
4.5
0
20
40
80
120
100
60
5 V
6 V
TJ = 25°C
7 V
0
20
40
80
120
100
60
2.0
2.8
3.6
4.4
6.0
7.6
5.2
6.8
VDS ≥ 10 V
100
°C
25
°C
TJ = 55°C
0.006
0.008
0.012
0.016
0.020
0.018
0.014
0.010
0
20
40
60
80
120
100
VGS = 10 V
TJ = 100°C
55
°C
25
°C
0
20
40
60
80
120
100
0.0100
0.0108
0.0116
0.0124
0.0132
0.0128
0.0120
0.0112
0.0104
TJ = 25°C
15 V
VGS = 10 V
50
25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.4
1.8
1.2
1.6
1
10
100
1000
0
1020
4050
60
30
VGS = 0 V
TJ = 125°C
100
°C
25
°C
110
10
30
50
70
90
110
10
30
50
70
90
VGS = 10 V
8 V
9 V
VGS = 10 V
ID = 30 A
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