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参数资料
| 型号： | MTP60N06HD |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封装： | CASE 221A-09, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 223K |
| 代理商： | MTP60N06HD |
MTP60N06HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
71
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
μAdc
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
3.0
7.0
4.0
Vdc
mV/°C
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 30 Adc)
RDS(on)
0.011
0.014
Ohm
DraintoSource OnVoltage (VGS = 10 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ = 125°C)
VDS(on)
1.0
0.9
Vdc
Forward Transconductance
(VDS = 5.0 Vdc, ID = 30 Adc)
gFS
15
20
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
1950
2800
pF
Output Capacitance
Coss
660
924
Transfer Capacitance
Crss
147
300
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
(VDD = 30 Vdc, ID = 60 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
td(on)
14
26
ns
Rise Time
tr
197
394
TurnOff Delay Time
td(off)
50
102
Fall Time
tf
124
246
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 60 Adc,
VGS = 10 Vdc)
QT
51
71
nC
Q1
12
Q2
24
Q3
21
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc,
TJ = 125°C)
VSD
0.99
0.89
1.2
Vdc
Reverse Recovery Time
(See Figure 15)
(IS = 60 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
trr
60
ns
ta
36
tb
24
Reverse Recovery Stored Charge
QRR
0.143
μC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
LD
3.5
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
LS
7.5
nH
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Cpk =
Max limit Typ
3 x SIGMA
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTP60N06HD_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MTP60N10E7L | 制造商:ON Semiconductor 功能描述: |
| MTP610G | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:MODULAR TELEPHONE PLUGS |
| MTP610U | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:MODULAR TELEPHONE PLUGS |
| MTP610W | 制造商:ADAM-TECH 制造商全称:Adam Technologies, Inc. 功能描述:MODULAR TELEPHONE PLUGS |
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