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参数资料
| 型号： | MTW35N15E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 164K |
| 代理商： | MTW35N15E |
MTW35N15E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS
150
210
Vdc
mV/
°C
Zero Gate Voltage Drain Current
(VDS = 150 Vdc, VGS = 0 Vdc)
(VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
10
100
Adc
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
100
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
7.0
4.0
Vdc
mV/
°C
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 17.5 Adc)
RDS(on)
0.05
Ohm
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 35 Adc)
(ID = 17.5 Adc, TJ = 125°C)
VDS(on)
1.45
1.8
1.7
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 17.5 Adc)
gFS
11
18
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
25 Vd
V
0Vd
Ciss
3600
5040
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Coss
855
1170
Reverse Transfer Capacitance
f = 1.0 MHz)
Crss
165
330
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
td(on)
28
56
ns
Rise Time
(VDD = 75 Vdc, ID = 35 Adc,
VGS =10Vdc
tr
170
346
TurnOff Delay Time
VGS = 10 Vdc,
RG = 9.1 )
td(off)
90
180
Fall Time
RG 9.1 )
tf
103
210
Gate Charge
(S
Fi
8)
QT
98
137
nC
(See Figure 8)
(VDS = 120 Vdc, ID = 35 Adc,
Q1
19
(VDS
120 Vdc, ID
35 Adc,
VGS = 10 Vdc)
Q2
49
Q3
40
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 1)
(IS = 35 Adc, VGS = 0 Vdc)
(IS = 35 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD
0.95
0.9
1.5
Vdc
Reverse Recovery Time
(S
Fi
14)
trr
200
ns
(See Figure 14)
(I =35Adc V
= 0 Vdc
ta
167
(IS = 35 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/s)
tb
32
Reverse Recovery Stored
Charge
dIS/dt = 100 A/s)
QRR
1.63
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″ from package to center of die)
LD
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″ from package to source bond pad)
LS
13
nH
1. Pulse Test: Pulse Width
≤ 300 s, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW45N10 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
| MTW45N10E | 制造商:Rochester Electronics LLC 功能描述: |
| MTW4N80 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTW4N80E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTW54N05E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:High Energy in the Avalanche and Commutation modes |
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