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参数资料
| 型号： | MTW35N15E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 164K |
| 代理商： | MTW35N15E |
MTW35N15E
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
0
4.0
10
30
50
70
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
4.0
6.0
8.0
0
10
30
50
70
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATETOSOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
050
70
0.01
0.03
0.06
0.08
0.09
R
DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
050
70
0.035
0.039
0.047
ID, DRAIN CURRENT (AMPS)
Figure 3. OnResistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. OnResistance versus Drain Current
and Gate Voltage
50
0
1.0
2.5
R
DS(on)
0
50
150
0.1
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. OnResistance Variation with
Temperature
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 6. DrainToSource Leakage
Current versus Voltage
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
I DSS
,LEAKAGE
(nA)
25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
100°C
25°C
TJ = 100°C
25°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 17.5 A
7.0 V
6.0 V
5.0 V
8.0 V
3.5
2.5
1.5
0.5
5.0
3.0
20
30
40
60
20
60
10
100
40
20
40
60
0.05
0.07
0.043
0.5
VGS = 10 V
TJ = 125°C
100°C
25°C
7.0
9.0 V
2.0
1.0
3.0
60
40
30
0.02
0.04
10
0.041
0.045
0.037
2.0
1.5
0
TJ = 55°C
55°C
15 V
1.0
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