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参数资料
| 型号： | MTW35N15E |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | 35 A, 150 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE |
| 封装： | CASE 340K-01, 3 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 164K |
| 代理商： | MTW35N15E |
MTW35N15E
http://onsemi.com
6
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAINT
OSOURCE
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
10
1000
AV
ALANCHE
ENERGY
(mJ)
I D
,DRAIN
CURRENT
(AMPS)
1.0
0
25
50
75
100
125
600
300
100
ID = 35 A
500
100
150
t, TIME (s)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0.2
0.05
0.1
1.0E05
1.0E04
1.0E03
0.01
1.0E02
1.0E01
1.0E+00
1.0E+01
1.0
0.01
1 ms
10 ms
DC
0.1
10 s
200
400
D = 0.05
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100 s
VGS = 20 V
SINGLE PULSE
TC = 25°C
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) RθJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
SINGLE PULSE
0.1
1000
10
1.0
100
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MTW45N10 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
| MTW45N10E | 制造商:Rochester Electronics LLC 功能描述: |
| MTW4N80 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTW4N80E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTW54N05E | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:High Energy in the Avalanche and Commutation modes |
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