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| 型号： | MW6S004NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 4/13页 |
| 文件大小： | 498K |
| 描述： | MOSFET RF N-CHAN 28V 4W PLD-1.5 |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 1.96GHz |
| 增益： | 18dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 50mA |
| 功率 - 输出： | 4W |
| 电压 - 额定： | 68V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MW6S004NT1DKR |
12
RF Device Data
Freescale Semiconductor
MW6S004NT1
PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE
Refer to the following documents to aid your design process.
Application Notes
?
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
?
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
?
Electromigration MTTF Calculator
?
RF High Power Model
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the ?Part Number? link. Go to the
Software & Tools tab on the part?s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
2
Feb. 2007
?
Corrected MSL Rating from 3 to 1 in Table 4, Moisture Sensitivity Level, p. 2
?
Updated VGS(th)
and V
GS(Q)
to reflect tighter HV6 windows and added Fixture Gate Quiescent V
GG(Q)
to On
Characteristics table to account for test fixture resistor divider network, p. 2
?
Updated Part Numbers in Table 6, Component Designations and Values, to RoHS compliant part
numbers, p. 3
?
Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture
limitations, p. 6
?
Replaced Figure 12, MTTF versus Junction Temperature with updated graph. Removed Amps2
and listed
operating characteristics and location of MTTF calculator for device, p. 7
?
Added Product Documentation and Revision History section, p. 12
3
Apr. 2009
?
Corrected ESD structures to reflect current testing results. Changed HBM from 1A to 1C and CDM from III
to IV, p. 1
?
Corrected Ciss
test condition to indicate AC stimulus on the VGS
connection versus the V
DS
connection,
Dynamic Characteristics table, p. 2
?
Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 3
?
Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part
numbers, p. 3
4
June 2009
?
Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing
process as described in Product and Process Change Notification number, PCN13516, p. 2
?
Added Electromigration MTTF Calculator and RF High Power Model availability to Product Documentation,
Tools and Software, p. 12
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MW6S004NT1_07 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MW6S010 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistor |
| MW6S010GMR1 | 功能描述:MOSFET RF N-CH 28V 10W TO270-2GW RoHS:是 类别:分离式半导体产品 >> RF FET 系列:- 产品目录绘图:MOSFET SOT-23-3 Pkg 标准包装:3,000 系列:- 晶体管类型:N 通道 JFET 频率:- 增益:- 电压 - 测试:- 额定电流:30mA 噪音数据:- 电流 - 测试:- 功率 - 输出:- 电压 - 额定:25V 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:带卷 (TR) 产品目录页面:1558 (CN2011-ZH PDF) 其它名称:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MW6S010GNR1 | 功能描述:射频MOSFET电源晶体管 HV6 900MHZ 10W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
| MW6S010GNR1-CUT TAPE | 制造商:Freescale 功能描述:MW6S010 Series 450-1500 MHz 10 W 28 V Lateral N-Ch RF Power MOSFET |
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