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| 型号： | MW6S004NT1 |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 6/13页 |
| 文件大小： | 498K |
| 描述： | MOSFET RF N-CHAN 28V 4W PLD-1.5 |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 1.96GHz |
| 增益： | 18dB |
| 电压 - 测试： | 28V |
| 额定电流： | 10µA |
| 电流 - 测试： | 50mA |
| 功率 - 输出： | 4W |
| 电压 - 额定： | 68V |
| 封装/外壳： | PLD-1.5 |
| 供应商设备封装： | PLD-1.5 |
| 包装： | 标准包装 |
| 产品目录页面： | 560 (CN2011-ZH PDF) |
| 其它名称： | MW6S004NT1DKR |
2
RF Device Data
Freescale Semiconductor
MW6S004NT1
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 68 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
500
nAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 50 mAdc)
VGS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(VDS
= 28 Vdc, I
D
= 50 mAdc)
VGS(Q)
?
2.7
?
Vdc
Fixture Gate Quiescent Voltage (1)
(VDD
= 28 Vdc, I
D
= 50 mAdc, Measured in Functional Test)
VGG(Q)
2.2
3
4.2
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 50 mAdc)
VDS(on)
?
0.27
0.37
Vdc
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Crss
?
21
?
pF
Output Capacitance
(VDS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Coss
?
25
?
pF
Input Capacitance
(VDS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
Ciss
?
30
?
pF
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 50 mA, P
out
= 4 W PEP, f1 = 1960 MHz,
f2 = 1960.1 MHz, Two-Tone Test
Power Gain
Gps
16.5
18
20
dB
Drain Efficiency
ηD
28
33
?
%
Intermodulation Distortion
IMD
?
-34
-28
dBc
Input Return Loss
IRL
?
-12
-10
dB
Typical Performance
(In Freescale 900 MHz Demo Board, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 50 mA, P
out
= 4 W PEP,
f = 900 MHz, Two-Tone Test, 100 kHz Tone Spacing
Power Gain
Gps
?
19
?
dB
Drain Efficiency
ηD
?
33
?
%
Intermodulation Distortion
IMD
?
-39
?
dBc
Input Return Loss
IRL
?
-12
?
dB
1. VGG
=
11/10
x V
GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board.
Refer to Test Circuit Schematic.
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