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参数资料
| 型号： | MZ0912B100YTRAY |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 5/14页 |
| 文件大小： | 119K |
| 代理商： | MZ0912B100YTRAY |
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MX0912B100Y;
MZ0912B100Y
MX0912B100Y;
MZ0912B100Y
Information as of 2000-08-22
MX0912B100Y; MZ0912B100Y; NPN microwave power transistors
MX0912B100Y; MZ0912B100Y links to the similar products page containing an overview of products that are similar in function or
related to the part number(s) as listed on this page. The similar products page includes products from the same catalog tree(s) , relevant
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Type nr.
Title
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release date
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Page
count
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size
(kB)
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MX0912B100Y;
MZ0912B100Y
NPN microwave power transistors
20-Feb-97
Product
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12
98
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North American
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(12nc)
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MX0912B100Y
9340 548 87114
Standard Marking * Trade
Pack
SOT439 Full production
MZ0912B100Y MZ0912B100Y TRAY
9339 940 50114
Standard Marking * Trade
Pack
SOT443 Full production
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Royal Philips Electronics
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MZ0912B50Y | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN microwave power transistor |
| MZ0912B50Y TRAY | 功能描述:两极晶体管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MZ0912B50Y,114 | 功能描述:两极晶体管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MZ1.0GD100V-2.5 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:ZENER DIODE |
| MZ1.0GD10V-25 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:ZENER DIODE |
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