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参数资料
| 型号： | MZ0912B100YTRAY |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 7/14页 |
| 文件大小： | 119K |
| 代理商： | MZ0912B100YTRAY |
1997 Feb 20
2
Philips Semiconductors
Product specication
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
FEATURES
Interdigitated structure provides high emitter efficiency
Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
Gold metallization realizes very stable characteristics
and excellent lifetime
Multicell geometry improves power sharing and low
thermal resistance
Input and output matching cell allows an easier design
of circuits.
APPLICATIONS
Common base class-C broadband pulse power
amplifiers operating at 960 to 1215 MHz for TACAN
application.
DESCRIPTION
NPN silicon planar epitaxial microwave power transistors.
The MX0912B100Y has a SOT439A metal ceramic flange
package and improved output prematching cells. It is
recommended for new designs.
The MZ0912B100Y has a SOT443A metal ceramic flange
package with the base connected to the flange. It is
mounted in common base configuration and specified in
class C.
PINNING
PIN
DESCRIPTION
1
collector
2
emitter
3
base connected to ange
Fig.1 Simplified outline and symbol (SOT439A).
olumns
e
c
b
MAM045
1
2
Top view
3
Fig.2 Simplified outline and symbol (SOT443A).
handbook, halfpage
MAM314
1
2
3
Top view
e
c
b
QUICK REFERENCE DATA
Microwave performance at Tmb ≤ 25 °C in a common base class-C broadband amplier.
MODE OF OPERATION
f
(GHz)
VCC
(V)
PL
(W)
GP
(dB)
ηC
(%)
Zi; ZL
(
)
Class-C; tp =10 s; δ = 10 %
0.960 to 1.215
50
>100
>7
>42
see Figs 8 and 9
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MZ0912B50Y | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN microwave power transistor |
| MZ0912B50Y TRAY | 功能描述:两极晶体管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MZ0912B50Y,114 | 功能描述:两极晶体管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MZ1.0GD100V-2.5 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:ZENER DIODE |
| MZ1.0GD10V-25 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:ZENER DIODE |
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