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参数资料
| 型号： | MZ0912B100YTRAY |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件页数： | 9/14页 |
| 文件大小： | 119K |
| 代理商： | MZ0912B100YTRAY |
1997 Feb 20
4
Philips Semiconductors
Product specication
NPN microwave power transistors
MX0912B100Y; MZ0912B100Y
THERMAL CHARACTERISTICS
Notes
1. See “
Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under pulsed microwave operating conditions.
CHARACTERISTICS
Tmb =25 °C unless otherwise specied.
APPLICATION INFORMATION
Microwave performance up to Tmb =25 °C measured in the test jig as shown in Fig.7 and working in class C broadband
in pulse mode; note 1.
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
thermal resistance from junction to mounting-base Tj = 125 °C
3.2
K/W
Rth mb-h
thermal resistance from mounting-base to heatsink Tj = 125 °C; note 1
0.2
K/W
Zth jh
thermal impedance from junction to heatsink
tp =10 s; δ =10%;
Tj = 125 °C; notes 1 and 2
0.43
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
ICBO
collector cut-off current
VCB =65V; IE = 0
40
mA
VCB =50V; IE =0
4
mA
ICES
collector cut-off current
VCB =60V; RBE = 0
40
mA
IEBO
emitter cut-off current
VEB = 1.5 V; IC = 0
400
A
MODE OF OPERATION
f
(GHz)
VCC
(V)(2)
PL
(W)
Gp
(dB)
η
C
(%)
Zi/ZL
(
)
Class C;
tp =10 s; δ = 10%
0.960 to 1.215
50
≥100
typ. 115
≥7
typ. 7.6
≥42
typ. 44
see Figs 8 and 9
tp = 300 s; δ = 10%;
see Fig.6
1.03 to 1.09
50
typ. 125
typ. 8
typ. 50
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MZ0912B50Y | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:NPN microwave power transistor |
| MZ0912B50Y TRAY | 功能描述:两极晶体管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MZ0912B50Y,114 | 功能描述:两极晶体管 - BJT BULKTR TNS-MICP RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MZ1.0GD100V-2.5 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:ZENER DIODE |
| MZ1.0GD10V-25 | 制造商:MIC 制造商全称:MIC GROUP RECTIFIERS 功能描述:ZENER DIODE |
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