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参数资料
| 型号： | NAND01GR4A3AZB6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63 |
| 封装： | 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63 |
| 文件页数： | 1/56页 |
| 文件大小： | 882K |
| 代理商： | NAND01GR4A3AZB6F |
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PRELIMINARY DATA
July 2004
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
NAND128-A, NAND256-A
NAND512-A, NAND01G-A
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
FEATURES SUMMARY
■
HIGH DENSITY NAND FLASH MEMORIES
–
Up to 1 Gbit memory array
–
Up to 32 Mbit spare area
–
Cost effective solutions for mass storage
applications
■
NAND INTERFACE
–
x8 or x16 bus width
–
Multiplexed Address/ Data
–
Pinout compatibility for all densities
■
SUPPLY VOLTAGE
–
1.8V device: VDD = 1.7 to 1.95V
–
3.0V device: VDD = 2.7 to 3.6V
■
PAGE SIZE
–
x8 device: (512 + 16 spare) Bytes
–
x16 device: (256 + 8 spare) Words
■
BLOCK SIZE
–
x8 device: (16K + 512 spare) Bytes
–
x16 device: (8K + 256 spare) Words
■
PAGE READ / PROGRAM
–
Random access: 12s (max)
–
Sequential access: 50ns (min)
–
Page program time: 200s (typ)
■
COPY BACK PROGRAM MODE
–
Fast page copy without external buffering
■
FAST BLOCK ERASE
–
Block erase time: 2ms (Typ)
■
STATUS REGISTER
■
ELECTRONIC SIGNATURE
■
CHIP ENABLE ‘DON’T CARE’ OPTION
–
Simple interface with microcontroller
■
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
–
Boot from NAND support
–
Automatic Memory Download
■
SERIAL NUMBER OPTION
Figure 1. Packages
■
HARDWARE DATA PROTECTION
–
Program/Erase locked during Power
transitions
■
DATA INTEGRITY
–
100,000 Program/Erase cycles
–
10 years Data Retention
■
DEVELOPMENT TOOLS
–
Error Correction Code software and
hardware models
–
Bad Blocks Management and Wear
Leveling algorithms
–
PC Demo board with simulation software
–
File System OS Native reference software
–
Hardware simulation models
TSOP48 12 x 20mm
VFBGA55 8 x 10 x 1mm
TFBGA55 8 x 10 x 1.2mm
VFBGA63 8.5 x 15 x 1mm
TFBGA63 8.5 x 15 x 1.2mm
FBGA
WSOP48 12 x 17 x 0.65mm
相关PDF资料 |
PDF描述 |
|---|---|
| NAND512R4A1AN1T | 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND512R4A1AV6 | 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND01GR3A1AN1T | 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND01GR3A3AN1T | 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND01GR4A3AZB6F | 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR4B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2ADI6 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GR4B2AN1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2AN6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2AZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
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