收藏本站
参数资料
型号： NAND01GR4A3AZB6F
厂商： NUMONYX
元件分类： PROM
英文描述： 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
封装： 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63
文件页数： 55/56页
文件大小： 882K
代理商： NAND01GR4A3AZB6F
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
8/56
Table 2. Product Description
Figure 2. Logic Diagram
Table 3. Signal Names
Reference
Part Number
Density
Bus
Width
Page
Size
Block
Size
Memory
Array
Operating
Voltage
Timings
Package
Random
Access
Max
Sequential
Access
Min
Page
Program
Typical
Block
Erase
Typical
NAND128-A
NAND128R3A
128Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
1024 Blocks
1.7 to 1.95V
10s
60ns
200s
2ms
TSOP48
WSOP48
VFBGA55
NAND128W3A
2.7 to 3.6V
10s
50ns
200s
NAND128R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
10s
60ns
200s
NAND128W4A
2.7 to 3.6V
10s
50ns
200s
NAND256-A
NAND256R3A
256Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
2048 Blocks
1.7 to 1.95V
10s
60ns
200s
2ms
TSOP48
WSOP48
VFBGA55
NAND256W3A
2.7 to 3.6V
10s
50ns
200s
NAND256R4A
x16
256+8
Words
8K+256
Words
1.7to 1.95V
10s
60ns
200s
NAND256W4A
2.7 to 3.6V
10s
50ns
200s
NAND512-A
NAND512R3A
512Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
4096 Blocks
1.7to 1.95V
10s
60ns
200s
2ms
TFBGA55
NAND512W3A
2.7 to 3.6V
10s
50ns
200s
NAND512R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
10s
60ns
200s
NAND512W4A
2.7 to 3.6V
10s
50ns
200s
NAND512-A
NAND512R3A
512Mbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
4096 Blocks
1.7to 1.95V
15s
60ns
200s
2ms
TSOP48
WSOP48
VFBGA63
NAND512W3A
2.7 to 3.6V
12s
50ns
200s
NAND512R4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
15s
60ns
200s
NAND512W4A
2.7 to 3.6V
12s
50ns
200s
NAND01G-A
NAND01GR3A
1Gbit
x8
512+16
Bytes
16K+512
Bytes
32 Pages x
8192 Blocks
1.7 to 1.95V
15s
60ns
200s
2ms
TSOP48
TFBGA63
NAND01GW3A
2.7 to 3.6V
12s
50ns
200s
NAND01GR4A
x16
256+8
Words
8K+256
Words
1.7 to 1.95V
15s
60ns
200s
NAND01GW4A
2.7 to 3.6V
12s
50ns
200s
AI07557C
W
I/O8-I/O15, x16
VDD
NAND Flash
E
VSS
WP
AL
CL
RB
R
I/O0-I/O7, x8/x16
I/O8-15
Data Input/Outputs for x16 devices
I/O0-7
Data Input/Outputs, Address Inputs,
or Command Inputs for x8 and x16
devices
AL
Address Latch Enable
CL
Command Latch Enable
E
Chip Enable
R
Read Enable
RB
Ready/Busy (open-drain output)
W
Write Enable
WP
Write Protect
VDD
Supply Voltage
VSS
Ground
NC
Not Connected Internally
DU
Do Not Use
相关PDF资料
PDF描述
NAND512R4A1AN1T 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND512R4A1AV6 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A1AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR3A3AN1T 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48
NAND01GR4A3AZB6F 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63
相关代理商/技术参数
参数描述
NAND01GR4B 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2ADI6 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
NAND01GR4B2AN1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2AN6 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
NAND01GR4B2AZA1 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*