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| 型号： | NAND01GR4A3AZB6F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63 |
| 封装： | 8.50 X 15 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, TFBGA-63 |
| 文件页数： | 49/56页 |
| 文件大小： | 882K |
| 代理商： | NAND01GR4A3AZB6F |
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NAND128-A, NAND256-A, NAND512-A, NAND01G-A
APPENDIX A. HARDWARE INTERFACE EXAMPLES
Nand Flash devices can be connected to a micro-
controller system bus for code and data storage.
For microcontrollers that have an embedded
NAND controller the NAND Flash can be connect-
ed without the addition of glue logic (see
Figure 45.). However a minimum of glue logic is
required for general purpose microcontrollers that
do not have an embedded NAND controller. The
glue logic usually consists of a flip-flop to hold the
Chip Enable, Address Latch Enable and Com-
mand Latch Enable signals stable during com-
mand and address latch operations, and some
logic gates to simplify the firmware or make the de-
sign more robust.
Figure 46. gives an example of how to connect a
NAND Flash to a general purpose microcontroller.
The additional OR gates allow the microcontrol-
ler’s Output Enable and Write Enable signals to be
used for other peripherals. The OR gate between
A3 and CSn maps the flip-flop and NAND I/O in
different address spaces inside the same chip se-
lect unit, which improves the setup and hold times
and simplifies the firmware. The structure uses the
microcontroller DMA (Direct Memory Access) en-
gines to optimize the transfer between the NAND
Flash and the system RAM.
For any interface with glue logic, the extra delay
caused by the gates and flip-flop must be taken
into account. This delay must be added to the mi-
crocontroller’s AC characteristics and register set-
tings to get the NAND Flash setup and hold times.
For mass storage applications (hard disk emula-
tions or systems where a huge amount of storage
is required) NAND Flash memories can be con-
nected together to build storage modules (see Fig-
Figure 45. Connection to Microcontroller, Without Glue Logic
AI08045b
R
W
I/O
E
AL
CL
W
G
CSn
AD(24:16)
Microcontroller
NAND
Flash
DQ
WP
RB
PWAITEN
AD17
AD16
VDD
VDD or VSS
or General Purpose I/O
相关PDF资料 |
PDF描述 |
|---|---|
| NAND512R4A1AN1T | 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND512R4A1AV6 | 32M X 16 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND01GR3A1AN1T | 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND01GR3A3AN1T | 128M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 |
| NAND01GR4A3AZB6F | 64M X 16 FLASH 1.8V PROM, 15000 ns, PBGA63 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NAND01GR4B | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2ADI6 | 功能描述:闪存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| NAND01GR4B2AN1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2AN6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
| NAND01GR4B2AZA1 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1 Gbit, 2 Gbit, 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory |
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