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参数资料
| 型号： | NCL30105GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/22页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL 80V 350 FOR LED DRV |
| 设计资源： | NCL30105GEVB Gerber Files NCL30105GEVB BOM NCL30105GEVB Schematic |
| 标准包装： | 1 |
| 电流 - 输出 / 通道： | 350mA |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 60V |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCL30105 |
| 其它名称： | NCL30105GEVBOS |
NCL30105
Table 3. ELECTRICAL CHARACTERISTICS (R toff = 40.2 k W , V DIM = 3 V, C SSTART = 100 nF, V CS = 0 V, C DRV = 1 nF, V CC = 12 V,
unless otherwise specified (For typical values, T J = 25 ° C. For min/max values, T J = ? 40 ° C to 125 ° C, unless otherwise specified))
Characteristic
Test Conditions
Symbol
Min
Typ
Max
Unit
PROTECTION
Maximum On Time
Number of Consecutive Maximum On
Time Events or Overcurrent Events
Overcurrent Current Sense Voltage
Threshold
t on(MAX)
N fault
V ILIM(fault)
29.8
?
1.5
34
8
1.6
42.1
?
1.7
m s
?
V
Overcurrent Propagation Delay
Overcurrent Leading Edge Blanking Dur-
ation
Leading Edge Blanking Duration Ratio
Startup Delay
Thermal Shutdown
Thermal Shutdown Hysteresis
V CS = 0 V to 2 V Step,
dV/dt = 10 V/ m s
V CS = V ILIM(fault) to V DRV = 10%
t LEB(fault) /t LEB
V CC = V CC(on) to V DRV = 90%
T J = Increasing
T J = Decreasing
t ILIM(fault)
t LEB(fault)
t LEB(ratio)
t start(delay)
T SHDN
T SHDN(HYS)
10
170
0.3
100
70
220
0.4
130
155
40
150
280
0.8
172
ns
ns
?
ms
° C
° C
Thermal Shutdown Delay
T SHDN(delay)
75
m s
5. See Figure 17.
6. The tolerance of toff is guaranteed by design.
7. The thermal limitation of the device specified by the Maximum Ratings Table must not be exceeded.
http://onsemi.com
6
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