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参数资料
| 型号： | NCN6001DTBR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/36页 |
| 文件大小： | 0K |
| 描述： | IC INTERFACE SMART CARD 20TSSOP |
| 标准包装： | 1 |
| 应用： | 智能卡 |
| 接口： | 微控制器 |
| 电源电压： | 2.75 V ~ 5.5 V |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 20-TSSOP |
| 包装： | 标准包装 |
| 安装类型： | 表面贴装 |
| 其它名称： | NCN6001DTBR2GOSDKR |
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NCN6001
http://onsemi.com
16
POWER DOWN SEQUENCE
The NCN6001 provides an automatic Power Down
sequence, according to the ISO78163 specifications, and
the communication session terminates immediately. The
sequence is launched when the card is extracted, or when the
CRD_VCC voltage is overloaded as described by the
ISO/CEI 78163 sequence depicted hereafter:
ISO78163 sequence:
"Force RST to Low
"Force CLK to Low, unless it is already in this state
"Force C4 & C8 to Low
"Force CRD_IO to Low
"Shut Off the CRD_VCC supply
Since the internal digital filter is activated for any card
insertion or extraction, the physical power sequence will be
activated 50
ms (typical) after the card has been extracted. Of
course, such a delay does not exist when the MPU
intentionally launches the power down. Figure 7 shows the
oscillogram captured in the NCN6001 demo board.
The internal active pull down NMOS connected across
CRD_VCC and GND discharges the external reservoir
capacitor in 100
ms (typical), assuming Cout = 10 mF.
Figure 7. Typical Power Down Sequence
Typical delay between each signal is 500 ns
The internal active pull down NMOS connected across CRD_VCC and GND discharges the external reservoir capacitor in
100
ms (typical), assuming Cout = 10 mF.
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| NCN6001MUTWG | 制造商:ON Semiconductor 功能描述:ANA COMPACT SMARTCARD IC - Tape and Reel 制造商:ON Semiconductor 功能描述:IC INTERFACE SMART CARD 制造商:ON Semiconductor 功能描述:REEL - ANA COMPACT SMARTCARD IC |
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| NCN6004AFTBR2 | 功能描述:输入/输出控制器接口集成电路 2.7V POS/ATM Smart RoHS:否 制造商:Silicon Labs 产品: 输入/输出端数量: 工作电源电压: 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:QFN-64 封装:Tray |
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