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参数资料
| 型号： | NCP1606BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 18/22页 |
| 文件大小： | 245K |
| 描述： | IC POWER FACTOR CONTROLLER 8SOIC |
| 标准包装： | 1 |
| 模式： | 临界传导（CRM） |
| 电流 - 启动： | 20µA |
| 电源电压： | 10.3 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCP1606BDR2GOSDKR |
NCP1606
http://onsemi.com
18
Figure 37. OCP Circuitry with Optional External RC
Filter
CS
+
OCP
LEB
DRIVE
optional
R
SENSE
V
CS(limit)
SHUTDOWN MODE
The NCP1606 allows for two methods to place the
controller into a standby mode of operation. The FB pin can
be pulled below the UVP level (0.3 V typical) or the ZCD
pin can be pulled below the V
SDL
level (typically 200 mV).
If the FB pin is used for shutdown (Figure 38(a)), care must
be taken to ensure that no significant leakage current exists
on the shutdown circuitry. This could impact the output
voltage regulation. If the ZCD pin is used for shutdown
(Figure 38(b)), then any parasitic capacitance created by
the shutdown circuitry will add to the delay in detecting the
zero inductor current event.
Figure 38. Shutting Down the PFC Stage by Pulling FB to GND (A) or Pulling ZCD to GND (B)
1
4
3
2
8
5
6
7
FB
Ctrl
Ct
Cs
GND
ZCD
DRV
NCP1606
Shutdown
Shutdown
R
ZCD
R
OUT2
R
OUT1
V
OUT
C
comp
V
CC
1
4
3
2
8
5
6
7
FB
Ctrl
Ct
Cs
GND
ZCD
DRV
NCP1606
V
CC
Figure 38(a)
Figure 38(b)
L
BOOST
To activate the shutdown feature on ZCD, the internal
clamp must first be overcome. This clamp will draw a
maximum of I
CL(NEG)
(5.0 mA maximum) before releasing
and allowing the ZCD pin voltage to drop low enough to
shutdown the part (Figure 39). After shutdown, the
comparator includes approximately 90 mV of hysteresis to
ensure noise free operation. A small current source (70 mA
typ) is also activated to pull the unit out of the shutdown
condition when the external pull down is released.
Figure 39. Shutdown Comparator and Current Draw to Overcome Negative Clamp
Shutdown
5 mA
~1 V
V
SDL
V
SDH
I
ZCD
V
CL(NEG)
~70 mA
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