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| 型号： | NCP1606BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/22页 |
| 文件大小： | 245K |
| 描述： | IC POWER FACTOR CONTROLLER 8SOIC |
| 标准包装： | 1 |
| 模式： | 临界传导（CRM） |
| 电流 - 启动： | 20µA |
| 电源电压： | 10.3 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCP1606BDR2GOSDKR |
NCP1606
http://onsemi.com
3
PIN FUNCTION DESCRIPTION
Pin Number
Name
Function
1
Feedback (FB)
The FB pin makes available the inverting input of the internal error amplifier. A simple resistor divider
scales and delivers the output voltage to the FB pin to maintain regulation. The feedback information
is also used for the programmable overvoltage and undervoltage protections.
2
Control
The regulation block output is available on this pin. A compensation network is placed between FB
and Control to set the loop bandwidth low enough to yield a high power factor ratio and a low THD.
3
Ct
The Ct pin sources a 270 mA current to charge an external timing capacitor. The circuit controls the power
switch on time by comparing the Ct voltage to an internal voltage derived from the regulation block.
4
Current Sense
(CS)
This pin limits the pulse by pulse current through the switch MOSFET when connected as show in
Figure 1. When the voltage exceeds 1.7 V (A version) or 0.5 V (B version), the drive turns off. The
maximum switch current can be adjusted by changing the sense resistor.
5
Zero Current
Detection (ZCD)
The voltage of an auxiliary winding should be applied to this pin to detect the moment when the coil is
demagnetized for critical conduction mode operation. Ground ZCD to shutdown the part.
6
Ground (GND)
Connect this pin to the preconverter ground.
7
Drive (DRV)
The powerful integrated driver is suitable to effectively switch a high gate charge power MOSFET.
8
V
CC
This pin is the positive supply of the IC. The circuit starts to operate when V
CC
exceeds 12 V (typ)
and turns off when V
CC
goes below 9.5 V (typ). After startup, the operating range is 10.3 V to 20 V.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Supply Voltage
V
CC
0.3 to 20
V
Supply Current
I
CC
?0
mA
DRV Voltage
V
DRV
0.3 to 20
V
DRV Current
I
DRV
800 to 500
mA
FB Voltage
V
FB
0.3 to 10
V
FB Current
I
FB
?0
mA
Control Voltage
V
Control
0.3 to 10
V
Control Current
I
Control
2 to 10
mA
Ct Voltage
V
Ct
0.3 to 6
V
Ct Current
I
Ct
?0
mA
CS Voltage
V
CS
0.3 to 6
V
CS Current
I
CS
?0
mA
ZCD Voltage
V
ZCD
0.3 to 10
V
ZCD Current
I
ZCD
?0
mA
Power Dissipation and Thermal Characteristics
P suffix, Plastic Package, Case 626
Maximum Power Dissipation @ T
A
= 70癈
Thermal Resistance JunctiontoAir
D suffix, Plastic Package, Case 751
Maximum Power Dissipation @ T
A
= 70癈
Thermal Resistance JunctiontoAir
P
D
(DIP)
R
qJA
(DIP)
P
D
(SO)
R
qJA
(SO)
800
100
450
178
mW
癈/W
mW
癈/W
Operating Junction Temperature Range
T
J
40 to +125
癈
Maximum Junction Temperature
T
J(MAX)
150
癈
Storage Temperature Range
T
STG
65 to 150
癈
Lead Temperature (Soldering, 10 s)
T
L
300
癈
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1.
This device series contains ESD protection and exceeds the following tests:
Pins 16, 8: Human Body Model 2000 V per JEDEC Standard JESD22A114E,
Machine Model Method 200 V per JEDEC Standard JESD22A115A
Pin 7: Human Body Model 2000 V per JEDEC Standard JESD22A114E,
Machine Model Method 180 V per JEDEC Standard JESD22A115A
2. This device contains latchup protection and exceeds ?00 mA per JEDEC Standard JESD78.
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