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参数资料
| 型号： | NCP1606BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/22页 |
| 文件大小： | 245K |
| 描述： | IC POWER FACTOR CONTROLLER 8SOIC |
| 标准包装： | 1 |
| 模式： | 临界传导（CRM） |
| 电流 - 启动： | 20µA |
| 电源电压： | 10.3 V ~ 20 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NCP1606BDR2GOSDKR |
NCP1606
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified: For typical values, T
J
= 25癈. For min/max values, T
J
= 40癈 to +125癈, V
CC
= 12 V, FB = 2.4 V, C
DRV
=
1 nF, Ct = 1 nF, CS = 0 V, Control = open, ZCD = open)
Symbol
Unit
Max
Typ
Min
Rating
V
CL(NEG)
Negative Active Clamp Voltage @ I
ZCD
= 2.5 mA
0.45
0.6
0.75
V
I
CL(NEG)
Current Capability of the Negative Active Clamp:
in normal mode (V
ZCD
= 300 mV)
in shutdown mode (V
ZCD
= 100 mV)
2.5
35
3.7
70
5.0
100
mA
mA
V
SD
L
Shutdown Threshold (V
ZCD
falling)
150
200
250
mV
V
SD
H
Enable Threshold (V
ZCD
rising)
290
350
mV
V
SD
HYS
Shutdown Comparator Hysteresis
90
mV
t
ZCD
Zero current detection propagation delay
100
170
ns
t
SYNC
Minimum detectable ZCD pulse width
70
ns
t
START
Drive off restart timer
75
180
300
ms
RAMP CONTROL
I
CHARGE
Charge Current (V
CT
= 0 V)
25癈 < T
J
< +125癈
40癈 < T
J
< +125癈
243
235
270
270
297
297
mA
t
CT(discharge)
Time to discharge a 1 nF Ct capacitor from V
CT
= 3.4 V to 100 mV.
100
ns
V
CTMAX
Maximum Ct level before DRV switches off
25癈 < T
J
< +125癈
40癈 < T
J
< +125癈
2.9
2.9
3.2
3.2
3.3
3.4
V
t
PWM
Propagation delay of the PWM comparator
150
220
ns
OVER AND UNDERVOLTAGE PROTECTION
I
OVP
Dynamic overvoltage protection (OVP) triggering current:
NCP1606A
NCP1606B @ T
J
= 25癈
NCP1606B @ T
J
= 40癈 to +125癈
34
9.0
8.7
40
10.4
45
11.8
12.1
mA
I
OVP(HYS)
Hysteresis of the dynamic OVP current before the OVP latch is released:
NCP1606A
NCP1606B
30
8.5
mA
V
OVP
Static OVP Threshold Voltage
V
EAL
+
100 mV
V
V
UVP
Undervoltage protection (UVP) threshold voltage
0.25
0.3
0.4
V
GATE DRIVE SECTION
R
OH
R
OL
Gate Drive Resistance:
R
OH
@ I
SOURCE
= 100 mA
R
OH
@ I
SOURCE
= 20 mA
R
OL
@ I
SINK
= 100 mA
R
OL
@ I
SINK
= 20 mA
12
12
6
6
18
18
10
10
W
t
rise
Drive voltage rise time from 10% V
CC
to 90% V
CC
with C
DRV
= 1 nF and V
CC
= 12 V.
30
80
ns
t
fall
Drive voltage fall time from 90% V
CC
to 10% V
CC
with C
DRV
= 1 nF and V
CC
= 12 V.
25
70
ns
V
OUT(start)
Driver output voltage at V
CC
= V
CC(on)
200 mV and I
sink
= 10 mA
0.2
V
3. Parameter values are valid for transient conditions only.
4. Parameter characterized and guaranteed by design, but not tested in production.
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