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| 型号： | NCP3020ADR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 19/23页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 1 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 360kHz |
| 占空比： | 84% |
| 电源电压： | 4.7 V ~ 28 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 其它名称： | NCP3020ADR2GOSDKR |
NCP3020A, NCP3020B, NCV3020A, NCV3020B
I G1
I G2
where:
Q GD Q GD
t ON + + (eq. 29)
V BST * V TH R HSPU ) R G
and:
Q GD Q GD
t OFF + + (eq. 30)
V BST * V TH R HSPD ) R G
Next, the MOSFET output capacitance losses are caused
by both the control and synchronous MOSFET but are
dissipated only in the control MOSFET.
I G1 : output current from the high ? side gate drive (HSDR)
I G2 : output current from the low ? side gate drive (LSDR)
? SW : switching frequency of the converter. NCP3020A is
300 kHz and NCP3020B is 600 kHz
V BST : gate drive voltage for the high ? side drive, typically
7.5 V.
Q GD : gate charge plateau region, commonly specified in the
MOSFET datasheet
V TH : gate ? to ? source voltage at the gate charge plateau
region
Q OSS : MOSFET output gate charge specified in the data
sheet
2
P DS + 1 @ Q OSS @ V IN @ f SW
(eq. 31)
Q RR : reverse recovery charge of the low ? side or
synchronous MOSFET, specified in the datasheet
Finally the loss due to the reverse recovery time of the
body diode in the synchronous MOSFET is shown as
follows:
P RR + Q RR @ V IN @ f SW (eq. 32)
The low ? side or synchronous MOSFET turns on into zero
volts so switching losses are negligible. Its power
dissipation only consists of conduction loss due to R DS(on)
and body diode loss during the non ? overlap periods.
P D_SYNC + P COND ) P BODY (eq. 33)
Conduction loss in the low ? side or synchronous
MOSFET is described as follows:
2
P COND + I RMS_SYNC @ R DS(on)_SYNC (eq. 34)
where:
R DS(on)_CONTROL : on resistance of the high ? side, or
control, MOSFET
R DS(on)_SYNC : on resistance of the low ? side, or
synchronous, MOSFET
NOL LH : dead time between the LSDR turning off and the
HSDR turning on, typically 85 ns
NOL HL : dead time between the HSDR turning off and the
LSDR turning on, typically 75 ns
Once the MOSFET power dissipations are determined,
the designer can calculate the required thermal impedance
for each device to maintain a specified junction temperature
at the worst case ambient temperature. The formula for
calculating the junction temperature with the package in free
air is:
T J + T A ) P D @ R q JA
( 1 * D) @ 1 )
I RMS_SYNC + I OUT @
ra 2
12
The body diode losses can be approximated as:
P BODY + V FD @ I OUT @ f SW @ NOL LH ) NOL HL
Vth
(eq. 35)
(eq. 36)
T J : Junction Temperature
T A : Ambient Temperature
P D : Power Dissipation of the MOSFET under analysis
R q JA : Thermal Resistance Junction ? to ? Ambient of the
MOSFET’s package
As with any power design, proper laboratory testing
should be performed to insure the design will dissipate the
required power under worst case operating conditions.
Variables considered during testing should include
maximum ambient temperature, minimum airflow,
maximum input voltage, maximum loading, and component
variations (i.e. worst case MOSFET R DS(on) ).
Figure 33. MOSFET Switching Characteristics
http://onsemi.com
19
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP3020AGEVB | 功能描述:电源管理IC开发工具 NCP3020A EVALUATION BOARD RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCP3020B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Synchronous PWM Controller |
| NCP3020BDR2G | 功能描述:软开关 PWM 控制器 SYNC PWM CNTRL RoHS:否 制造商:Fairchild Semiconductor 输出端数量: 输出电流: 开关频率: 工作电源电压:30 V 电源电流: 最大工作温度:+ 105 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Reel |
| NCP3020BGEVB | 功能描述:电源管理IC开发工具 NCP3020A EVALUATION BOARD RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCP302HSN09T1 | 功能描述:电压监测器/监控器 0.9V Detector RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
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