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| 型号： | NCV33152DR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET DUAL HS 8SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCV33152DR2OS |
MC34152, MC33152, NCV33152
ELECTRICAL CHARACTERISTICS (V CC = 12 V, for typical values T A = 25 ° C, for min/max values T A is the operating ambient
temperature range that applies [Note 3], unless otherwise noted.)
Characteristics
Symbol
Min
Typ
Max
Unit
LOGIC INPUTS
Input Threshold Voltage
V
Output Transition High ? to ? Low State
Output Transition Low ? to ? High State
V IH
V IL
?
0.8
1.75
1.58
2.6
?
Input Current
High State (V IH = 2.6 V)
Low State (V IL = 0.8 V)
I IH
I IL
?
?
100
20
300
100
m A
DRIVE OUTPUT
Output Voltage
V
Low State (I sink = 10 mA)
Low State (I sink = 50 mA)
Low State (I sink = 400 mA)
High State (I source = 10 mA)
High State (I source = 50 mA)
High State (I source = 400 mA)
V OL
V OH
?
?
?
10.5
10.4
10
0.8
1.1
1.8
11.2
11.1
10.8
1.2
1.5
2.5
?
?
?
Output Pull ? Down Resistor
R PD
?
100
?
k W
SWITCHING CHARACTERISTICS (T A = 25 ° C)
Propagation Delay (C L = 1.0 nF)
Logic Input to: Drive Output Rise (10% Input to 10% Output)
Drive Output Fall (90% Input to 90% Output)
t PLH (IN/OUT)
t PHL (IN/OUT)
?
?
55
40
120
120
ns
Drive Output Rise Time (10% to 90%)
Drive Output Rise Time (10% to 90%)
Drive Output Fall Time (90% to 10%)
Drive Output Fall Time (90% to 10%)
C L = 1.0 nF
C L = 2.5 nF
C L = 1.0 nF
C L = 2.5 nF
t r
t f
?
?
?
?
14
36
15
32
30
?
30
?
ns
ns
TOTAL DEVICE
Power Supply Current
Standby (Logic Inputs Grounded)
Operating (C L = 1.0 nF Drive Outputs 1 and 2, f = 100 kHz)
Operating Voltage
I CC
V CC
?
?
6.1
6.0
10.5
?
8.0
15
18
mA
V
UNDERVOLTAGE LOCKOUT
Startup Threshold
Minimum Operating Voltage After Turn ? On (V CC )
V th
V CC(min)
?
?
5.8
5.3
6.1
?
V
V
3. Low duty cycle pulse techniques are used during test to maintain junction temperature as close to ambient as possible.
T low = 0 ° C for MC34152, ? 40 ° C for MC33152, ? 40 ° C for MC33152V
T high = +70 ° C for MC34152, +85 ° C for MC33152, +125 ° C for MC33152V
NCV33152: T low = ? 40 ° C, T high = +125 ° C. Guaranteed by design.
http://onsemi.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV33152DR2G | 功能描述:功率驱动器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV33161 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Universal Voltage Monitors |
| NCV33161DMR2G | 功能描述:电压监测器/监控器 AEC ANA UNI VOLT MONITOR RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
| NCV33161DR2 | 功能描述:监控电路 2.65V UnderVoltage RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCV33161DR2G | 功能描述:监控电路 ANA UNIV VOLT MNTR RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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