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| 型号： | NCV33152DR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET DUAL HS 8SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCV33152DR2OS |
MC34152, MC33152, NCV33152
LAYOUT CONSIDERATIONS
High frequency printed circuit layout techniques are
imperative to prevent excessive output ringing and
overshoot. Do not attempt to construct the driver circuit
on wire ? wrap or plug ? in prototype boards. When
driving large capacitive loads, the printed circuit board
must contain a low inductance ground plane to minimize
the voltage spikes induced by the high ground ripple
currents. All high current loops should be kept as short as
possible using heavy copper runs to provide a low
impedance high frequency path. For optimum drive
V CC
performance, it is recommended that the initial circuit
design contains dual power supply bypass capacitors
connected with short leads as close to the V CC pin and
ground as the layout will permit. Suggested capacitors are
a low inductance 0.1 m F ceramic in parallel with a 4.7 m F
tantalum. Additional bypass capacitors may be required
depending upon Drive Output loading and circuit layout.
Proper printed circuit board layout is extremely
critical and cannot be over emphasized.
47
0.1
6
+
-
5.7V
V in
V in
TL494
or
2
7
R g
D 1
TL594
1N5819
4
5
Series gate resistor R g may be needed to damp high frequency parasitic oscillations
3
The MC34152 greatly enhances the drive capabilities of common switching
regulators and CMOS/TTL logic devices.
Figure 18. Enhanced System Performance with
Common Switching Regulators
7
4X
1N5819
5
3
Output Schottky diodes are recommended when driving inductive loads at high
frequencies. The diodes reduce the driver's power dissipation by preventing the
output pins from being driven above V CC and below ground.
Figure 20. Direct Transformer Drive
caused by the MOSFET input capacitance and any series wiring inductance in the
gate-source circuit. R g will decrease the MOSFET switching speed. Schottky diode
D 1 can reduce the driver's power dissipation due to excessive ringing, by preventing
the output pin from being driven below ground.
Figure 19. MOSFET Parasitic Oscillations
Isolation
Boundary
1N
5819
3
Figure 21. Isolated MOSFET Drive
http://onsemi.com
8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV33152DR2G | 功能描述:功率驱动器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV33161 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Universal Voltage Monitors |
| NCV33161DMR2G | 功能描述:电压监测器/监控器 AEC ANA UNI VOLT MONITOR RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
| NCV33161DR2 | 功能描述:监控电路 2.65V UnderVoltage RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCV33161DR2G | 功能描述:监控电路 ANA UNIV VOLT MNTR RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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