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| 型号： | NCV33152DR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | IC DRIVER MOSFET DUAL HS 8SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 2,500 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 55ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 6.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCV33152DR2OS |
MC34152, MC33152, NCV33152
the NPN pullup during the negative output transient, power
dissipation at high frequencies can become excessive.
Figures 19, 20, and 21 show a method of using external
Schottky diode clamps to reduce driver power dissipation.
Undervoltage Lockout
An undervoltage lockout with hysteresis prevents erratic
system operation at low supply voltages. The UVLO forces
the Drive Outputs into a low state as V CC rises from 1.4 V
to the 5.8 V upper threshold. The lower UVLO threshold
is 5.3 V, yielding about 500 mV of hysteresis.
aid in this calculation, power MOSFET manufacturers
provide gate charge information on their data sheets.
Figure 17 shows a curve of gate voltage versus gate charge
for the ON Semiconductor MTM15N50. Note that there are
three distinct slopes to the curve representing different
input capacitance values. To completely switch the
MOSFET ‘on,’ the gate must be brought to 10 V with
respect to the source. The graph shows that a gate charge
Q g of 110 nC is required when operating the MOSFET with
a drain to source voltage V DS of 400 V.
Power Dissipation
Circuit performance and long term reliability are
enhanced with reduced die temperature. Die temperature
increase is directly related to the power that the integrated
16
12
MTM15B50
I D = 15 A
T A = 25 ° C
V DS = 100 V
V DS = 400 V
circuit must dissipate and the total thermal resistance from
the junction to ambient. The formula for calculating the
junction temperature with the package in free air is:
T J = T A + P D (R q JA )
8.0
4.0
8.9 nF
where:
T J = Junction Temperature
T A = Ambient Temperature
P D = Power Dissipation
R q JA = Thermal Resistance Junction to Ambient
0
0
2.0 nF
40
D Q g
C GS = D V GS
80 120
Q g , GATE CHARGE (nC)
160
There are three basic components that make up total
power to be dissipated when driving a capacitive load with
respect to ground. They are:
P D = P Q + P C + P T
where: P Q = Quiescent Power Dissipation
P C = Capacitive Load Power Dissipation
P T = Transition Power Dissipation
The quiescent power supply current depends on the
supply voltage and duty cycle as shown in Figure 16. The
device’s quiescent power dissipation is:
P Q = V CC (I CCL [1 ? D] + I CCH [D])
where: I CCL = Supply Current with Low State Drive
Outputs
I CCH = Supply Current with High State Drive
Outputs
D = Output Duty Cycle
The capacitive load power dissipation is directly related
to the load capacitance value, frequency, and Drive Output
voltage swing. The capacitive load power dissipation per
driver is:
P C = V CC (V OH ? V OL ) C L f
where: V OH = High State Drive Output Voltage
V OL = Low State Drive Output Voltage
C L = Load Capacitance
f = Frequency
When driving a MOSFET, the calculation of capacitive
load power P C is somewhat complicated by the changing
gate to source capacitance C GS as the device switches. To
Figure 17. Gate ? to ? Source Voltage
versus Gate charge
The capacitive load power dissipation is directly related to
the required gate charge, and operating frequency. The
capacitive load power dissipation per driver is:
P C(MOSFET) = V CC Q g f
The flat region from 10 nC to 55 nC is caused by the
drain ? to ? gate Miller capacitance, occurring while the
MOSFET is in the linear region dissipating substantial
amounts of power. The high output current capability of the
MC34152 is able to quickly deliver the required gate
charge for fast power efficient MOSFET switching. By
operating the MC34152 at a higher V CC , additional charge
can be provided to bring the gate above 10 V. This will
reduce the ‘on’ resistance of the MOSFET at the expense
of higher driver dissipation at a given operating frequency.
The transition power dissipation is due to extremely
short simultaneous conduction of internal circuit nodes
when the Drive Outputs change state. The transition power
dissipation per driver is approximately:
P T ≈ V CC (1.08 V CC C L f ? 8 x 10 ? 4 )
P T must be greater than zero.
Switching time characterization of the MC34152 is
performed with fixed capacitive loads. Figure 13 shows
that for small capacitance loads, the switching speed is
limited by transistor turn ? on/off time and the slew rate of
the internal nodes. For large capacitance loads, the
switching speed is limited by the maximum output current
capability of the integrated circuit.
http://onsemi.com
7
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相关代理商/技术参数 |
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|---|---|
| NCV33152DR2G | 功能描述:功率驱动器IC 1.5A High Speed Dual Non-Inverting MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCV33161 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Universal Voltage Monitors |
| NCV33161DMR2G | 功能描述:电压监测器/监控器 AEC ANA UNI VOLT MONITOR RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
| NCV33161DR2 | 功能描述:监控电路 2.65V UnderVoltage RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCV33161DR2G | 功能描述:监控电路 ANA UNIV VOLT MNTR RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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