参数资料
型号: NDS355N
厂商: Fairchild Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: MOSFET N-CH 30V 1.6A SSOT3
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品变化通告: Mold Compound Change 07/Dec/2007
产品目录绘图: SuperSOT-3, SOT-23
标准包装: 1
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 1.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 85 毫欧 @ 1.9A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 5nC @ 5V
输入电容 (Ciss) @ Vds: 245pF @ 10V
功率 - 最大: 460mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: 3-SSOT
包装: 标准包装
产品目录页面: 1602 (CN2011-ZH PDF)
其它名称: NDS355NDKR
Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = 250 μA
V DS = 24 V, V GS = 0 V
V GS = 12 V, V DS = 0 V
V GS = -12 V, V DS = 0 V
T J =125°C
30
1
10
100
-100
V
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μA
1
1.6
2
V
T J =125°C
0.5
1.3
1.5
R DS(ON)
Static Drain-Source On-Resistance
V GS = 4.5 V, I D = 1.6 A
0.125
?
V GS = 10 V, I D = 1.9 A
T J =125°C
0.25
0.085
I D(ON)
g FS
On-State Drain Current
Forward Transconductance
V GS = 4.5 V, V DS = 5 V
V DS = 5 V, I D = 1.6 A
6
3.5
A
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
245
130
20
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 10 V, I D = 1 A,
V GS = 10 V, R GEN = 6 ?
V DS = 10 V, I D = 1.6 A,
V GS = 5 V
15
14
12
4
3.5
30
30
25
10
5
1
2
ns
ns
ns
ns
nC
nC
nC
NDS355N Rev. D1
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