参数资料
型号: NDS8434
厂商: Fairchild Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: MOSFET P-CH 20V 6.5A 8-SOIC
产品培训模块: High Voltage Switches for Power Processing
SMPS Power Switch
产品变化通告: Mold Compound Change 12/Dec/2007
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 6.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 35 毫欧 @ 6.5A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 80nC @ 4.5V
输入电容 (Ciss) @ Vds: 2330pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 标准包装
产品目录页面: 1603 (CN2011-ZH PDF)
其它名称: NDS8434DKR
Electrical Characteristics (T A = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V GS = 0 V, I D = -250 μA
V DS = -16 V, V GS = 0 V
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
T J = 55 o C
-20
-1
-10
100
-100
V
μA
μA
nA
nA
ON CHARACTERISTICS (Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = -250 μA
-0.4
-0.7
-1
V
T J = 125 o C
-0.3
-0.45
-0.8
R DS(ON)
Static Drain-Source On-Resistance
V GS = -4.5 V, I D = -6.5 A
0.026
0.035
?
V GS = -2.7 V, I D = -5.5 A
T J = 125 o C
0.037
0.036
0.07
0.05
I D(on)
On-State Drain Current
V GS = -4.5 V, V DS = -5 V
-15
A
V GS = -2.7 V, V DS = -5 V
-10
g FS
Forward Transconductance
V DS = -10 V, I D = -6.5 A
18
S
DYNAMIC CHARACTERISTICS
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -10 V, V GS = 0 V,
f = 1.0 MHz
2330
1070
360
pF
pF
pF
SWITCHING CHARACTERISTICS (Note 2)
t D(on)
t r
t D(off)
t f
Q g
Q gs
Q gd
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -6 V, I D = -1 A,
V GEN = -4.5 V, R GEN = 6 ?
V DS = -5 V,
I D = -6.5 A, V GS = -4.5 V
20
38
169
63
40
5.3
11
40
80
300
120
80
ns
ns
ns
ns
nC
nC
nC
NDS8434 Rev. A3
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相关代理商/技术参数
参数描述
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NDS8434A 功能描述:MOSFET Single P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS8434A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO
NDS8434A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SO-8
NDS8434A_NL 功能描述:MOSFET 20V P-CH. FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube