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| 型号： | NDT2955 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 60V 2.5A SOT-223-4 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品目录绘图： | MOSFET SOT-223 Pkg |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 300 毫欧 @ 2.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 601pF @ 30V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1604 (CN2011-ZH PDF) |
| 其它名称： | NDT2955DKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Avalanche Ratings
W DSS
Drain-Source Avalanche Energy
Single Pulse, V DD = 30 V, I D = 2.5 A
174
mJ
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–60
–60
V
mV/ ° C
I DSS
I GSSF
I GSSR
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
V DS = –60 V,
V GS = –20 V,
V GS = –20 V,
V GS = 0 V
V DS = 0 V
V DS = 0 V
–10
100
–100
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
Gate Threshold Voltage
V DS = V GS ,
I D = –250 μ A
–2
–2.6
–4
V
? V GS(th)
? T J
Gate Threshold Voltage
Temperature Coefficient
I D = –250 μ A, Referenced to 25 ° C
5.7
mV/ ° C
R DS(on)
Static Drain–Source
On–Resistance
V GS = –10 V, I D = –2.5 A
V GS = –4.5 V, I D = –2 A
95
163
300
500
m ?
V GS =–10 V, I D =–2.5 A, T J =125 ° C
153
513
I D(on)
On–State Drain Current
V GS = –10 V, V DS = –5 V
–12
A
g FS
Forward Transconductance
V DS = –10 V,
I D = –2.5 A
5.5
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = –30 V,
f = 1.0 MHz
V GS = 0 V,
601
85
35
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –30 V,
V GS = –10 V,
V DS = –30 V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –2.5 A,
12
10
19
6
11
2.4
21
20
34
12
15
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
2.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Source Diode Forward Current
–2.5
A
V SD
t rr
Q rr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V GS = 0 V, I S = –2.5 A
I F = –2.5 A,
d iF /d t = 100 A/μs
(Note 2)
–0.8
25
40
–1.2
V
nS
nC
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
mounted on a 1in
in pad of 2 oz
a) 42°C/W when
2
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
2
c) 110°C/W when mounted on a
minimum pad.
copper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
NDT2955 Rev. C
相关PDF资料 |
PDF描述 |
|---|---|
| NDT3055L | MOSFET N-CH 60V 4A SOT-223-4 |
| NDT3055 | MOSFET N-CH 60V 4A SOT-223-4 |
| NDT451AN_J23Z | MOSFET N-CH 30V 7.2A SOT-223 |
| NDT452AP | MOSFET P-CH 30V 5A SOT-223-4 |
| NDT454P | MOSFET P-CH 30V 5.9A SOT-223 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDT2955(J23Z) | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 2.5A I(D) | SOT-223 |
| NDT2955 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-CH 60V 2.5A SOT-223 RL |
| NDT2955 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223 |
| NDT2955_02 | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor |
| NDT2955_F081 | 制造商:Fairchild Semiconductor 功能描述:NDT2955_F081 |
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