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参数资料
| 型号： | NOIL1SM0300A-WWC |
| 厂商： | ON Semiconductor |
| 文件页数： | 29/30页 |
| 文件大小： | 0K |
| 描述： | IC IMAGE SENSOR LUPA300 48LLC |
| 标准包装： | 1 |
| 系列： | LUPA300 |
| 象素大小： | 9.9µm x 9.9µm |
| 有源象素阵列： | 640H x 480V |
| 每秒帧数： | 250 |
| 电源电压： | 2.5 V，3.3 V |
| 类型： | CMOS 成像 |
| 封装/外壳： | 48-LCC |
| 供应商设备封装： | 48-LCC（14.22x14.22） |
| 包装： | 托盘 |
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NOIL1SM0300A
GLOSSARY
conversion gain
CDS
DNL
DSNU
fill-factor
INL
IR
Lux
pixel noise
photometric units
PLS
PRNU
QE
read noise
reset
reset noise
responsivity
ROI
sense node
sensitivity
spectral response
SNR
temporal noise
A constant that converts the number of electrons collected by a pixel into the voltage swing of the pixel. Con-
version gain = q/C where q is the charge of an electron (1.602E 19 Coulomb) and C is the capacitance of the
photodiode or sense node.
Correlated double sampling. This is a method for sampling a pixel where the pixel voltage after reset is
sampled and subtracted from the voltage after exposure to light.
Differential nonlinearity (for ADCs)
Dark signal nonuniformity. This parameter characterizes the degree of nonuniformity in dark leakage currents,
which can be a major source of fixed pattern noise.
A parameter that characterizes the optically active percentage of a pixel. In theory, it is the ratio of the actual
QE of a pixel divided by the QE of a photodiode of equal area. In practice, it is never measured.
Integral nonlinearity (for ADCs)
Infrared. IR light has wavelengths in the approximate range 750 nm to 1 mm.
Photometric unit of luminance (at 550 nm, 1lux = 1 lumen/m 2 = 1/683 W/m 2 )
Variation of pixel signals within a region of interest (ROI). The ROI typically is a rectangular portion of the pixel
array and may be limited to a single color plane.
Units for light measurement that take into account human physiology.
Parasitic light sensitivity. Parasitic discharge of sampled information in pixels that have storage nodes.
Photo-response nonuniformity. This parameter characterizes the spread in response of pixels, which is a
source of FPN under illumination.
Quantum efficiency. This parameter characterizes the effectiveness of a pixel in capturing photons and con-
verting them into electrons. It is photon wavelength and pixel color dependent.
Noise associated with all circuitry that measures and converts the voltage on a sense node or photodiode into
an output signal.
The process by which a pixel photodiode or sense node is cleared of electrons. ”Soft” reset occurs when the
reset transistor is operated below the threshold. ”Hard” reset occurs when the reset transistor is operated
above threshold.
Noise due to variation in the reset level of a pixel. In 3T pixel designs, this noise has a component (in units of
volts) proportionality constant depending on how the pixel is reset (such as hard and soft). In 4T pixel
designs, reset noise can be removed with CDS.
The standard measure of photodiode performance (regardless of whether it is in an imager or not). Units are
typically A/W and are dependent on the incident light wavelength. Note that responsivity and sensitivity are
used interchangeably in image sensor characterization literature so it is best to check the units.
Region of interest. The area within a pixel array chosen to characterize noise, signal, crosstalk, and so on.
The ROI can be the entire array or a small subsection; it can be confined to a single color plane.
In 4T pixel designs, a capacitor used to convert charge into voltage. In 3T pixel designs it is the photodiode
itself.
A measure of pixel performance that characterizes the rise of the photodiode or sense node signal in Volts
upon illumination with light. Units are typically V/(W/m 2 )/sec and are dependent on the incident light
wavelength. Sensitivity measurements are often taken with 550 nm incident light. At this wavelength, 1 683
lux is equal to 1 W/m 2 ; the units of sensitivity are quoted in V/lux/sec. Note that responsivity and sensitivity
are used interchangeably in image sensor characterization literature so it is best to check the units.
The photon wavelength dependence of sensitivity or responsivity.
Signal-to-noise ratio. This number characterizes the ratio of the fundamental signal to the noise spectrum up
to half the Nyquist frequency.
Noise that varies from frame to frame. In a video stream, temporal noise is visible as twinkling pixels.
http://onsemi.com
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相关代理商/技术参数 |
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|---|---|
| NOIL1SM1300AWES | 制造商:ON Semiconductor 功能描述:PW/H |
| NOIL1SM4000A | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:LUPA4000: 4 MegaPixel High Speed CMOS Sensor |
| NOIL1SM4000A-GDC | 功能描述:IC IMAGE SENSOR LUPA4000 127PGA RoHS:是 类别:传感器，转换器 >> 图像，相机 系列:* 标准包装:480 系列:- 象素大小:6.7µm x 6.7µm 有源象素阵列:768H x 488V 每秒帧数:52 电源电压:3.3V 类型:CMOS 成像 封装/外壳:48-QFP 供应商设备封装:48-QFP 包装:托盘 请注意:* 配用:4H2105-ND - HEADBOARD FOR KAC-004014H2104-ND - KIT EVAL FOR KAC-00401 其它名称:4H20954H2095-NDKAC-00401-CBC-LB-A0 |
| NOIL1SN3000A-GDC | 功能描述:IC IMAGE SENSOR LUPA3000 369PGA RoHS:是 类别:传感器，转换器 >> 图像，相机 系列:* 标准包装:480 系列:- 象素大小:6.7µm x 6.7µm 有源象素阵列:768H x 488V 每秒帧数:52 电源电压:3.3V 类型:CMOS 成像 封装/外壳:48-QFP 供应商设备封装:48-QFP 包装:托盘 请注意:* 配用:4H2105-ND - HEADBOARD FOR KAC-004014H2104-ND - KIT EVAL FOR KAC-00401 其它名称:4H20954H2095-NDKAC-00401-CBC-LB-A0 |
| NOIL2SC1300A-GDC | 功能描述:图像传感器和彩色传感器 LUPA1300-2 COLOR PGA168 RoHS:否 制造商:Avago Technologies 类型:Color Sensors 工作电源电压:2.5 V 封装 / 箱体: 图象大小: 颜色读出:Color 最大工作温度:+ 70 C 最小工作温度:- 25 C 封装:Reel |
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