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| 型号： | NSV1SS400T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 118K |
| 描述： | DIODE SWITCH 100V 200MA SOD523 |
| 标准包装： | 3,000 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1.2V @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 4ns |
| 电流 - 在 Vr 时反向漏电： | 100nA @ 80V |
| 电容@ Vr, F： | 3pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-79，SOD-523 |
| 供应商设备封装： | SOD-523 |
| 包装： | 带卷 (TR) |
               ? Semiconductor Components Industries, LLC, 2011 October, 2011 ? Rev. 7 1 Publication Order Number: 1SS400T1/D 1SS400T1G, NSV1SS400T1G High-Speed Switching Diode Features ? High?Speed Switching Applications ? Lead Finish: 100% Matte Sn (Tin) ? Qualified Maximum Reflow Temperature: 260°C ? Extremely Small SOD?523 Package ? AEC?Q101 Qualified and PPAP Capable ? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25 °C) Rating Symbol Max Unit Reverse Voltage VR 100 V Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 500 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR?5 Board (Note 1) @TA = 25 °C Derate above 25°C PD 200 1.57 mW mW/°C Thermal Resistance, Junction-to-Ambient RJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg ?55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR?4 @ Minimum Pad. ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 80 Vdc) IR ? 0.1 Adc Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD ? 3.0 pF Forward Voltage (IF = 100 mAdc) VF ? 1.2 Vdc Reverse Recovery Time (IF = I R = 10 mAdc) trr ? 4.0 ns http://onsemi.com 1 CATHODE 2 ANODE SOD?523 CASE 502 PLASTIC A = Device Code M = Date Code* = Pb?Free Package MARKING DIAGRAM Device Package Shipping? ORDERING INFORMATION 1 ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. A M 1 1SS400T1G SOD?523 (Pb?Free) 3000 / Tape & Reel (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. NSV1SS400T1G SOD?523 (Pb?Free) 3000 / Tape & Reel |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NSV20101JT1G | 制造商:ON Semiconductor 功能描述:20V NPN LOW VCE(SAT) - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / 20V NPN LOW VCE(SAT) |
| NSV20200LT1G | 功能描述:两极晶体管 - BJT 20V PNP LOW VCE(SAT) XTR RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| NSV20201LT1G | 制造商:ON Semiconductor 功能描述:20V NPN LOW VCE(SAT) XTR - Tape and Reel |
| NSV307 | 制造商:Microsemi Corporation 功能描述:NEW PART# FOR DRWG DZ880504A- - Bulk |
| NSV40200LT1G | 功能描述:TRANS PNP BIPO 40V 2A SOT-23-3 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
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