参数资料
型号: NSVBAT54HT1G
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 127K
描述: DIODE SCHOTTKY 30V SOD-323-2
标准包装: 3,000
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 800mV @ 100mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 5ns
电流 - 在 Vr 时反向漏电: 2µA @ 25V
电容@ Vr, F: 10pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: SC-76,SOD-323
供应商设备封装: SOD-323
包装: 带卷 (TR)
?
Semiconductor Components Industries, LLC, 2011
November, 2011 ?
Rev. 6
1
Publication Order Number:
BAT54HT1/D
BAT54HT1G,
NSVBAT54HT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
?
Extremely Fast Switching Speed
?
Low Forward Voltage ?
0.35 V (Typ) @ I
F
= 10 mAdc
?
Device Marking: JV
?
AEC Qualified and PPAP Capable
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(TJ
= 125
?C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR?5 Board,
(Note 1)
TA
= 25
?C
Derate above 25?C
PD
200
1.57
mW
mW/?C
Forward Current (DC)
IF
200
Max
mA
Non?Repetitive Peak Forward Current,
tp
< 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
IFRM
300
mA
Thermal Resistance
Junction?to?Ambient
RJA
635
?C/W
Junction and Storage Temperature Range
TJ, Tstg
?55
to150
?C
1. FR?4 Minimum Pad
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
30 VOLT SILICON
HOT?CARRIER DETECTOR
AND SWITCHING DIODES
Device Package Shipping?
ORDERING INFORMATION
SOD?323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
http://onsemi.com
BAT54HT1G SOD?323
(Pb?Free)
3,000 /
Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
JVM
2
1
JV = Device Code
M = Date Code
= Pb?Free Package
(Note: Microdot may be in either location)
NSVBAT54HT1G SOD?323
(Pb?Free)
3,000 /
Tape & Reel
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