参数资料
型号: NSVBAT54LT1G
厂商: ON Semiconductor
文件页数: 1/4页
文件大小: 96K
描述: DIODE SCHOTTKY 30V SOT-23-3
标准包装: 3,000
二极管类型: 肖特基
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA(DC)
电压 - 在 If 时为正向 (Vf)(最大): 800mV @ 100mA
速度: 小信号 =< 200mA(Io),任意速度
反向恢复时间(trr): 5ns
电流 - 在 Vr 时反向漏电: 2µA @ 25V
电容@ Vr, F: 10pF @ 1V,1MHz
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23-3(TO-236)
包装: 带卷 (TR)
?
Semiconductor Components Industries, LLC, 2013
October, 2013 ?
Rev. 12
Publication Order Number:
BAT54LT1/D
BAT54LT1G,
NSVBAT54LT1G
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
?
Extremely Fast Switching Speed
?
Low Forward Voltage ?
0.35 Volts (Typ) @ I
F
= 10 mAdc
?
AEC Qualified and PPAP Capable
?
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
?
These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
(TJ
= 125
°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Volts
Forward Power Dissipation
@ TA
= 25
°C
Derate above 25°C
PF
200
2.0
mW
mW/°C
Forward Current (DC)
IF
200 Max
mA
Non?Repetitive Peak Forward Current
tp
< 10 msec
IFSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IFRM
300
mA
Junction Temperature
TJ
?55 to +125
°C
Storage Temperature Range
Tstg
?55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
30 VOLTS
SILICON HOT?CARRIER
DETECTOR AND SWITCHING
DIODES
MARKING DIAGRAM
3
CATHODE
1
ANODE
SOT?23 (TO?236)
CASE 318
STYLE 8
(Note: Microdot may be in either location)
Device Package Shipping?
ORDERING INFORMATION
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
BAT54LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
http://onsemi.com
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
JV3 = Device Code
M = Date Code
= Pb?Free Package
1
JV3 M
NSVBAT54LT1G SOT?23
(Pb?Free)
3,000 /
Tape & Reel
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