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| 型号： | NSVBAT54LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/4页 |
| 文件大小： | 96K |
| 描述： | DIODE SCHOTTKY 30V SOT-23-3 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 200mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 100mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 反向恢复时间(trr)： | 5ns |
| 电流 - 在 Vr 时反向漏电： | 2µA @ 25V |
| 电容@ Vr, F： | 10pF @ 1V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
BAT54LT1G, NSVBAT54LT1G
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT?23 (TO?236)
CASE 318?08
ISSUE AP
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SCALE 10:1
mm
inches
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
VIEW C
L
0.25
L1
e
E
HE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1
0.01 0.06 0.10 0.001
b
0.37 0.44 0.50 0.015
c
0.09 0.13 0.18 0.003
D
2.80 2.90 3.04 0.110
E
1.20 1.30 1.40 0.047
e
1.78 1.90 2.04 0.070
L
0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
2.10 2.40 2.64 0.083
0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0°
???
10 0°
°
???
10°
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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