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| 型号： | NSVBAS70LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/3页 |
| 文件大小： | 126K |
| 描述： | DIODE SCHOTTKY 70V SOT-23-3 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 70V |
| 电流 - 平均整流 (Io)： | 70mA（DC） |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 1V @ 15mA |
| 速度： | 小信号 =< 200mA（Io），任意速度 |
| 电流 - 在 Vr 时反向漏电： | 10µA @ 70V |
| 电容@ Vr, F： | 2pF @ 0V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
             ? Semiconductor Components Industries, LLC, 2011 November, 2011 ? Rev. 8 1 Publication Order Number: BAS70LT1/D BAS70LT1G, NSVBAS70LT1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features ? Extremely Fast Switching Speed ? Low Forward Voltage ? AEC Qualified and PPAP Capable ? NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TJ = 150 ?C unless otherwise noted) Rating Symbol Value Unit Forward Current IF 70 mA Non?Repetitive Peak Forward Surge Current (t ? 1.0 s) IFSM 100 mA Reverse Voltage VR 70 V Forward Power Dissipation @ TA = 25 ?C Derate above 25?C PF 225 1.8 mW mW/?C Operating Junction and Storage Temperature Range TJ, Tstg ?55 to +150 ?C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb?Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SOT?23 (TO?236) CASE 318 STYLE 8 http://onsemi.com BE Specific Device Code M = Date Code* = Pb?Free Package MARKING DIAGRAM Device Package Shipping? ORDERING INFORMATION BAS70LT1G SOT?23 (Pb?Free) 3,000 / Tape & Reel ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3 CATHODE 1 ANODE 70 VOLTS SCHOTTKY BARRIER DIODES 1 BE M (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. NSVBAS70LT1G SOT?23 (Pb?Free) 3,000 / Tape & Reel |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NSVBAT54HT1G | 功能描述:肖特基二极管与整流器 SS SCHOTTKY DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVBAT54LT1G | 功能描述:肖特基二极管与整流器 SS SHKY DIO 30V TR RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVBAT54SWT1G | 功能描述:肖特基二极管与整流器 SS SHKY DIO 30V TR RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVBAT54WT1G | 功能描述:肖特基二极管与整流器 SS SHKY DIO 30V TR RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NSVBAV70TT1 | 制造商:Rochester Electronics LLC 功能描述:- Tape and Reel |
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