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| 型号： | NT5DS32M8AW-75B |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256Mb Double Data Rate SDRAM |
| 中文描述： | 256MB双数据速率SDRAM |
| 文件页数： | 17/78页 |
| 文件大小： | 1534K |
| 代理商： | NT5DS32M8AW-75B |
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NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
REV 1.1
12/2001
17
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Auto Precharge
Auto Precharge is a feature which performs the same individual-bank precharge function described above, but without requiring
an explicit command. This is accomplished by using A10 to enable Auto Precharge in conjunction with a specific Read or Write
command. A precharge of the bank/row that is addressed with the Read or Write command is automatically performed upon
completion of the Read or Write burst. Auto Precharge is nonpersistent in that it is either enabled or disabled for each individual
Read or Write command. Auto Precharge ensures that the precharge is initiated at the earliest valid stage within a burst. This is
determined as if an explicit Precharge command was issued at the earliest possible time without violating t
RAS
(min). The user
must not issue another command to the same bank until the precharge (t
RP
) is completed.
The NTC DDR SDRAM devices supports the optional t
RAS
lockout feature. This feature allows a Read command with Auto Pre-
charge to be issued to a bank that has been activated (opened) but has not yet satisfied the t
RAS
(min) specification. The t
RAS
lockout feature essentially delays the onset of the auto precharge operation until two conditions occur. One, the entire burst
length of data has been successfully prefetched from the memory array; and two, t
RAS
(min) has been satisfied.
As a means to specify whether a DDR SDRAM device supports the t
RAS
lockout feature, a new parameter has been defined,
t
RAP
(RAS Command to Read Command with Auto Precharge or better stated Bank Activate to Read Command with Auto Pre-
charge). For devices that support the t
RAS
lockout feature, t
RAP
= t
RCD
(min). This allows any Read Command (with or without
Auto Precharge) to be issued to an open bank once t
RCD
(min) is satisfied.
Burst Terminate
The Burst Terminate command is used to truncate read bursts (with Auto Precharge disabled). The most re-cently registered
Read command prior to the Burst Terminate command is truncated, as shown in the Operation section of this data sheet. Write
burst cycles are not to be terminated with the Burst Terminate command.
t
RAP
Definition
CK
CK
Command
DQ (BL=2)
t
RAPmin
NOP
ACT
NOP
RD A
NOP
NOP
NOP
NOP
ACT
NOP
NOP
t
RCDmin
t
RASmin
DQ0
DQ1
The above timing diagrams show the effects of t
for devices that support t
with Auto Precharge command (RDA) is issued with t
(min) and dataout is available with the shortest latency from the
Bank Activate command (ACT). The internal precharge operation, however, does not begin until after t
RAS
(min) is satisfied.
CL=2, t
CK
=10ns
Command
DQ (BL=4)
NOP
ACT
NOP
RD A
NOP
NOP
NOP
*
NOP
ACT
NOP
NOP
DQ0
DQ1
DQ2
DQ3
t
RPmin
Command
DQ (BL=8)
NOP
ACT
NOP
RD A
NOP
NOP
*
NOP
NOP
ACT
NOP
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
t
RPmin
DQ6
DQ7
*
*
Indicates Auto Precharge begins here
t
RPmin
相关PDF资料 |
PDF描述 |
|---|---|
| NT5DS32M8AW-7K | 256Mb Double Data Rate SDRAM |
| NT5DS32M8AW-8B | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-75B | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-7K | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-8B | 256Mb Double Data Rate SDRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NT5DS32M8AW-7K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Double Data Rate SDRAM |
| NT5DS32M8AW-8B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Double Data Rate SDRAM |
| NT5DS32M8CS | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CS-5T | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CS-6K | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
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