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| 型号： | NT5DS32M8AW-75B |
| 厂商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 256Mb Double Data Rate SDRAM |
| 中文描述： | 256MB双数据速率SDRAM |
| 文件页数： | 52/78页 |
| 文件大小： | 1534K |
| 代理商： | NT5DS32M8AW-75B |
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NT5DS64M4AT NT5DS64M4AW
NT5DS32M8AT NT5DS32M8AW
256Mb Double Data Rate SDRAM
REV 1.1
12/2001
52
NANYA TECHNOLOGY CORP
. All rights reserved.
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.
Capacitance
Parameter
Symbol
Min.
Max.
Units
Notes
Input Capacitance: CK, CK
CI
1
2.0
3.0
pF
1
Delta Input Capacitance: CK, CK
delta CI
1
0.25
pF
1
Input Capacitance: All other input-only pins (except DM)
CI
2
2.0
3.0
pF
1
Delta Input Capacitance: All other input-only pins (except DM)
delta CI
2
0.5
pF
1
Input/Output Capacitance: DQ, DQS, DM
C
IO
4.0
5.0
pF
1, 2
Delta Input/Output Capacitance: DQ, DQS, DM
delta C
IO
0.5
pF
1
1. V
DDQ
= V
DD
= 2.5V ±
0.2V (minimum range to maximum range), f = 100MHz, T
A
= 25
°
C, VO
DC
= V
DDQ/2
, VO
Peak -Peak
= 0.2V.
2. Although DM is an input-only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins. This is
required to match input propagation times of DQ, DQS and DM in the system.
DC Electrical Characteristics and Operating Conditions
(0°C
≤
T
A
≤
70
°
C;
V
D
DQ
= 2.5V
±
0.2V,
V
DD
=
+
2.5V
±
0.2V, see AC Characteristics)
Symbol
Parameter
Min
Max
Units
Notes
V
DD
Supply Voltage
2.3
2.7
V
1
V
DDQ
I/O Supply Voltage
2.3
2.7
V
1
V
SS
, V
SSQ
Supply Voltage
I/O Supply Voltage
0
0
V
V
REF
I/O Reference Voltage
0.49 x V
DDQ
0.51 x V
DDQ
V
1, 2
V
TT
I/O Termination Voltage (System)
V
REF
0.04
V
REF
+
0.04
V
1, 3
V
IH(DC)
Input High (Logic1) Voltage
V
REF
+
0.15
V
DDQ
+
0.3
V
1
V
IL(DC)
Input Low (Logic0) Voltage
0.3
V
REF
0.15
V
1
V
IN(DC)
Input Voltage Level, CK and CK Inputs
0.3
V
DDQ
+
0.3
V
1
V
ID(DC)
Input Differential Voltage, CK and CK Inputs
0.30
V
DDQ
+
0.6
V
1, 4
VI
Ratio
V-I Matching Pullup Current to Pulldown Current Ratio
0.71
1.4
5
I
I
Input Leakage Current
Any input 0V
≤
V
IN
≤
V
DD
; (All other pins not under test
=
0V)
5
5
μ
A
1
I
OZ
Output Leakage Current
(DQs are disabled; 0V
≤
V
out
≤
V
DDQ
5
5
μ
A
1
I
OH
Output Current: Nominal Strength Driver
High current (V
OUT
= V
-0.373V, min V
, min V
TT
)
Low current (V
OUT
= 0.373V, max V
REF
, max V
TT
)
16.8
mA
1
I
OL
16.8
I
OHW
Output Current: Half- Strength Driver
High current (V
OUT
= V
-0.763V, min V
, min V
TT
)
Low current (V
OUT
= 0.763V, max V
REF
, max V
TT
)
9.0
mA
1
I
OLW
9.0
1. Inputs are not recognized as valid until V
REF
stabilizes.
2. V
REF
is expected to be equal to 0.5 V
DDQ
of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak
noise on V
REF
may not exceed ± 2% of the DC value.
3. V
TT
is not applied directly to the device. V
TT
is a system supply for signal termination resistors, is expected to be set equal to V
REF
, and
must track variations in tHalf-he DC level of V
REF
.
4. V
ID
is the magnitude of the difference between the input level on CK and the input level on CK.
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera-ture and
voltage range, for device drain to source voltages for 0.25 volts to 1.0 volts. For a given output, it represents the maximum difference
between pullup and pulldown drivers due to process variation.
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PDF描述 |
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| NT5DS32M8AW-7K | 256Mb Double Data Rate SDRAM |
| NT5DS32M8AW-8B | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-75B | 256Mb Double Data Rate SDRAM |
| NT5DS64M4AW-7K | 256Mb Double Data Rate SDRAM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NT5DS32M8AW-7K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Double Data Rate SDRAM |
| NT5DS32M8AW-8B | 制造商:未知厂家 制造商全称:未知厂家 功能描述:256Mb Double Data Rate SDRAM |
| NT5DS32M8CS | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CS-5T | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
| NT5DS32M8CS-6K | 制造商:NANOAMP 制造商全称:NANOAMP 功能描述:256Mb DDR Synchronous DRAM |
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