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| 型号： | NTF3055-160T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 2A SOT223 |
| 产品变化通告： | Product Obsolescence 30/Dec/2003 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 280pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTF3055-160T1OS |
NTF3055–160
ELECTRICAL CHARACTERISTICS (TA = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage (Note 3.)
(VGS = 0 Vdc, ID = 250 μ Adc)
Temperature Coefficient (Positive)
V(BR)DSS
60
–
72
72
–
–
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
IDSS
μ Adc
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150 ° C)
–
–
–
–
1.0
10
Gate–Body Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
–
± 100
nAdc
ON CHARACTERISTICS (Note 3.)
Gate Threshold Voltage (Note 3.)
(VDS = VGS, ID = 250 μ Adc)
Threshold Temperature Coefficient (Negative)
VGS(th)
2.0
–
3.1
6.6
4.0
–
Vdc
mV/ ° C
Static Drain–to–Source On–Resistance (Note 3.)
RDS(on)
m ?
(VGS = 10 Vdc, ID = 1.0 Adc)
Static Drain–to–Source On–Resistance (Note 3.)
(VGS = 10 Vdc, ID = 2.0 Adc)
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 150 ° C)
VDS(on)
–
–
142
0.142
0.270
160
0.384
–
Vdc
Forward Transconductance (Note 3.)
(VDS = 8.0 Vdc, ID = 1.5 Adc)
gfs
–
1.8
–
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
–
200
280
pF
(V DS = 25 Vdc, VGS = 0 V,
Output Capacitance
Transfer Capacitance
Vd V
f = 1.0 MHz)
Coss
Crss
–
–
68
26
100
40
SWITCHING CHARACTERISTIC S (Note 4.)
Turn–On Delay Time
td(on)
–
9.2
20
ns
VGS = 10 Vdc,
Rise Time
Turn–Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 2.0 Adc,
Vdc
RG = 9.1 ? ) (Note 3.)
tr
td(off)
tf
–
–
–
9.2
16
9.2
20
40
20
(V DS = 48 Vdc, ID = 2.0 0 Adc,
Gate Charge
Vd 2 Ad
V GS = 10 Vdc) (Note 3.)
QT
Q1
Q2
–
–
–
6.9
1.4
3.0
14
–
–
nC
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.0 Adc, VGS = 0 Vdc)
VSD
Vdc
(IS = 2.0 Adc, VGS = 0 Vdc,
TJ = 150 ° C) (Note 3.)
–
–
0.86
0.70
1.0
–
Reverse Recovery Time
Reverse Recovery Stored Charge
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ μ s) (Note 3.)
trr
ta
tb
QRR
–
–
–
–
28.9
19.1
9.8
0.030
–
–
–
–
ns
μ C
3. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
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| NTF3055-160T3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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