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| 型号： | NTF3055-160T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 2A SOT223 |
| 产品变化通告： | Product Obsolescence 30/Dec/2003 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 280pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTF3055-160T1OS |
NTF3055–160
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NTF3055–160/D
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相关代理商/技术参数 |
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| NTF3055-160T3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTF3055-160T3LF | 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTF3055L108 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
| NTF3055L108/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 3.0 Amps， 60 Volts， Logic Level |
| NTF3055L108D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
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