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| 型号： | NTF3055L108T3LFG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 3A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 Product Discontinuation 03/Apr/2007 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 120 毫欧 @ 1.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 440pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTF3055L108T3LFGOS |
NTF3055L108, NVF3055L108
ELECTRICAL CHARACTERISTICS (T A = 25 ° C unless otherwise noted )
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 60 Vdc, V GS = 0 Vdc)
(V DS = 60 Vdc, V GS = 0 Vdc, T J = 150 ° C)
V (BR)DSS
I DSS
60
?
?
?
68
68
?
?
?
?
1.0
10
Vdc
mV/ ° C
m Adc
Gate ? Body Leakage Current
(V GS = ± 15 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 Vdc, I D = 1.5 Adc)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 5.0 Vdc, I D = 3.0 Adc)
(V GS = 5.0 Vdc, I D = 1.5 Adc, T J = 150 ° C)
V GS(th)
R DS(on)
V DS(on)
1.0
?
?
?
1.68
4.6
92
0.290
0.250
2.0
?
120
0.43
?
Vdc
mV/ ° C
m W
Vdc
Forward Transconductance (Note 3)
(V DS = 7.0 Vdc, I D = 3.0 Adc)
g fs
?
5.7
?
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = 25 Vdc, V GS = 0 V,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
313
112
40
440
160
60
pF
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
?
11
25
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V DD = 30 Vdc, I D = 3.0 Adc,
V GS = 5.0 Vdc,
R G = 9.1 W ) (Note 3)
t r
t d(off)
t f
?
?
?
35
22
27
70
45
60
Gate Charge
(V DS = 48 Vdc, I D = 3.0 Adc,
V GS = 5.0 Vdc) (Note 3)
Q T
Q 1
Q 2
?
?
?
7.6
1.4
4.0
15
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 3.0 Adc, V GS = 0 Vdc)
(I S = 3.0 Adc, V GS = 0 Vdc,
T J = 150 ° C) (Note 3)
(I S = 3.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.87
0.72
35
21
14
0.044
1.0
?
?
?
?
?
Vdc
ns
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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