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| 型号： | NTGS3441PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 1.8A 6-TSOP |
| 产品变化通告： | Wire Change 08/Oct/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.6V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 345pF @ 15V |
| 功率 - 最大： | 510mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGS3441P
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction?to?Ambient – Steady State (Note 3)
Junction?to?Ambient – t = 10 s (Note 3)
Junction?to?Ambient – Steady State (Note 4)
Symbol
R q JA
R q JA
R q JA
Value
128
78
244
Unit
° C/W
3. Surface?mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface?mounted on FR4 board using the minimum recommended pad size (Cu area = TBD in sq)
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = ?250 m A
?20
16
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
?1
m A
V DS = ?20 V
T J = 125 ° C
?10
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = ?250 m A
0.6
3.2
1.6
V
mV/ ° C
Drain?to?Source On Resistance
R DS(on)
V GS = 4.5 V, I D = ?3.0 A
91
110
m W
V GS = 2.7 V, I D = ?1.5 A
V GS = 2.5 V, I D = ?1.5 A
144
188
165
Forward Transconductance
g FS
V DS = ?15 V, I D =?1.5 A
4.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
345
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = ?15 V
150
40
Total Gate Charge
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = ?10 V; I D = ?3.0 A
3.25
0.3
0.6
1.4
6.0
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn?On Delay Time
t d(ON)
7.0
12
ns
Rise Time
Turn?Off Delay Time
Fall Time
T r
t d(OFF)
T f
V GS = 4.5 V, V DD = ?10 V,
I D = ?1.5 A, R G = 4.7 W
14
13
4.0
25
25
8.0
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
0.8
1.2
V
I S = ?3.0 A
T J = 125 ° C
0.7
Reverse Recovery Time
t RR
25
ns
Charge Time
Discharge Time
T a
T b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = ?3.0 A
10
15
Reverse Recovery Charge
Q RR
15
nC
5. Switching characteristics are independent of operating junction temperatures
6. Pulse Test: pulse width = 300 m s, duty cycle = 2%
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