参数资料
型号: NTGS3441PT1G
厂商: ON Semiconductor
文件页数: 5/6页
文件大小: 0K
描述: MOSFET P-CH 20V 1.8A 6-TSOP
产品变化通告: Wire Change 08/Oct/2008
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 1.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 110 毫欧 @ 3A,4.5V
Id 时的 Vgs(th)(最大): 1.6V @ 250µA
闸电荷(Qg) @ Vgs: 6nC @ 4.5V
输入电容 (Ciss) @ Vds: 345pF @ 15V
功率 - 最大: 510mW
安装类型: 表面贴装
封装/外壳: SC-74,SOT-457
供应商设备封装: 6-TSOP
包装: 带卷 (TR)
NTGS3441P
PACKAGE DIMENSIONS
TSOP?6
CASE 318G?02
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER
L
A
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
S
6
1
5
2
4
3
B
OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
MILLIMETERS
INCHES
D
DIM MIN MAX
A 2.90 3.10
MIN MAX
0.1142 0.1220
G
M
B
C
D
1.30 1.70
0.90 1.10
0.25 0.50
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.05 (0.002)
H
C
K
J
G
H
J
K
L
M
S
0.85 1.05
0.013 0.100
0.10 0.26
0.20 0.60
1.25 1.55
0 _ 10 _
2.50 3.00
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0 _ 10 _
0.0985 0.1181
STYLE 1:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
SOLDERING FOOTPRINT*
2.4
0.094
0.95
1.9
0.075
0.037
0.95
0.037
1.0
0.7
0.028
0.039
SCALE 10:1
mm
inches
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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