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参数资料
| 型号： | NTHD4502NT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN DUAL 30V CHIPFET |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 85 毫欧 @ 2.9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 140pF @ 15V |
| 功率 - 最大： | 640mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
NTHD4502N
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 4)
Junction ? to ? Ambient – t ≤ 5 s (Note 4)
Junction ? to ? Ambient – Steady State (Note 5)
Junction ? to ? Foot – Steady State (Note 5)
Symbol
R q JA
R q JA
R q JA
R q JF
Max
110
60
195
40
Unit
° C/W
4. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
5. Surface Mounted on FR4 Board using the minimum recommended pad size (Cu area = 0.214 in sq).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Zero Gate Voltage Drain Current
V (BR)DSS
I DSS
V GS = 0 V, I D = 250 m A
V GS = 0 V, V DS = 24 V
30
36
1.0
V
m A
V GS = 0 V, V DS = 24 V, T J = 125 ° C
10
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Drain ? to ? Source On ? Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = 250 m A
V GS = 10 V, I D = 2.9 A
1.0
1.65
78
3.0
85
V
m W
V GS = 4.5 V, I D = 2.2 A
105
140
Forward Transconductance
g FS
V DS = 15 V, I D = 2.9 A
3.8
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
140
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
53
16
Input Capacitance
C ISS
135
250
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 24 V
42
13
75
25
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 15 V,
I D = 2.9 A
V GS = 4.5 V, V DS = 24 V,
I D = 2.9 A
3.6
0.3
0.6
0.7
1.9
0.3
0.6
0.9
7.0
nC
nC
6. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
http://onsemi.com
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