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参数资料
| 型号： | NTHD5903 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET Dual P-Channel 2.2 A, 20 V(2.2A，20V，双P通道的功率MOSFET) |
| 中文描述： | 功率MOSFET双P沟道2.2，为20 V（2.2a在，20V的，双P通道的功率MOSFET的） |
| 文件页数： | 2/6页 |
| 文件大小： | 60K |
| 代理商： | NTHD5903 |
NTHD5903
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Maximum JunctiontoAmbient (Note 2)
t
5 sec
Steady State
R
thJA
50
90
60
110
°
C/W
Maximum JunctiontoFoot (Drain)
Steady State
R
thJF
30
40
°
C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
V
GateBody Leakage
I
GSS
V
DS
= 0 V, V
GS
=
12 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V
1.0
A
V
DS
= 16 V, V
GS
= 0 V,
T
J
= 85
°
5.0
OnState Drain Current (Note 3)
I
D(on)
V
DS
5.0 V, V
GS
= 4.5 V
10
A
DrainSource OnState Resistance (Note 3)
r
DS(on)
V
GS
= 4.5 V, I
D
= 2.2 A
0.130
0.155
V
GS
= 3.6 V, I
D
= 2.0 A
0.150
0.180
V
GS
= 2.5 V, I
D
= 1.7 A
0.215
0.260
Forward Transconductance (Note 3)
g
fs
V
DS
= 10 V, I
D
= 2.2 A
5.0
S
Diode Forward Voltage (Note 3)
V
SD
I
S
= 2.2 A, V
GS
= 0 V
0.8
1.2
V
Dynamic
(Note 4)
Total Gate Charge
Q
g
3.7
7.4
nC
GateSource Charge
Q
gs
V
DS
= 10 V, V
= 4.5 V,
I
D
= 2.2 A
0.8
GateDrain Charge
Q
gd
1.3
TurnOn Delay Time
t
d(on)
13
20
ns
Rise Time
t
r
V
DD
= 10 V, R
L
= 10
1 0 A V
= 4 5 V
1.0 A, V
= 4.5 V,
R
= 6
G
I
D
35
55
TurnOff Delay Time
t
d(off)
25
40
Fall Time
t
f
25
40
SourceDrain Reverse Recovery Time
t
rr
I
F
= 2.2 A, di/dt = 100 A/ s
40
80
2. Surface Mounted on 1
″
x 1
″
FR4 Board.
3. Pulse Test: Pulse Width
4. Guaranteed by design, not subject to production testing.
300 s, Duty Cycle
2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD5903T1 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5903T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET Dual P-Channel ChipFET? |
| NTHD5903T1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET |
| NTHD5903T1-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Dual P-Channel ChipFET |
| NTHD5903T1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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