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参数资料
| 型号： | NTHD5903 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET Dual P-Channel 2.2 A, 20 V(2.2A，20V，双P通道的功率MOSFET) |
| 中文描述： | 功率MOSFET双P沟道2.2，为20 V（2.2a在，20V的，双P通道的功率MOSFET的） |
| 文件页数： | 6/6页 |
| 文件大小： | 60K |
| 代理商： | NTHD5903 |
NTHD5903
http://onsemi.com
6
PACKAGE DIMENSIONS
ChipFET
CASE 1206A03
ISSUE E
B
S
C
D
G
L
A
1
2
3
4
8
7
6
5
M
J
K
1
2
3
4
8
7
6
5
DIM
A
B
C
D
G
J
K
L
M
S
MIN
2.95
1.55
1.00
0.25
MAX
3.10
1.70
1.10
0.35
MIN
0.116
0.061
0.039
0.010
MAX
0.122
0.067
0.043
0.014
INCHES
MILLIMETERS
0.65 BSC
0.10
0.28
0.55 BSC
5 NOM
0.025 BSC
0.004
0.011
0.022 BSC
5 NOM
0.072
0.20
0.42
0.008
0.017
1.80
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
7. 1206A01 AND 1206A02 OBSOLETE. NEW
STANDARD IS 1206A03.
0.05 (0.002)
2.00
0.080
STYLE 2:
PIN 1. SOURCE 1
2. GATE 1
3. SOURCE 2
4. GATE 2
5. DRAIN 2
6. DRAIN 2
7. DRAIN 1
8. DRAIN 1
ON Semiconductor
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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PUBLICATION ORDERING INFORMATION
N. American Technical Support
: 8002829855 Toll Free
USA/Canada
Japan
: ON Semiconductor, Japan Customer Focus Center
291 Kamimeguro, Meguroku, Tokyo, Japan 1530051
Phone
: 81357733850
NTHD5903/D
ChipFET is a trademark of Vishay Siliconix.
LITERATURE FULFILLMENT
:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone
: 3036752175 or 8003443860 Toll Free USA/Canada
Fax
: 3036752176 or 8003443867
Toll Free USA/Canada
Email
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ON Semiconductor Website
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Order Literature
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For additional information, please contact your
local Sales Representative.
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相关代理商/技术参数 |
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|---|---|
| NTHD5903T1 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5903T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET Dual P-Channel ChipFET? |
| NTHD5903T1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET |
| NTHD5903T1-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Dual P-Channel ChipFET |
| NTHD5903T1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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