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| 型号： | NTHD5903 |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET Dual P-Channel 2.2 A, 20 V(2.2A，20V，双P通道的功率MOSFET) |
| 中文描述： | 功率MOSFET双P沟道2.2，为20 V（2.2a在，20V的，双P通道的功率MOSFET的） |
| 文件页数： | 5/6页 |
| 文件大小： | 60K |
| 代理商： | NTHD5903 |
NTHD5903
http://onsemi.com
5
Figure 12. Basic
Figure 13. Style 2
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.254
0.010
mm
inches
SCALE 20:1
1.092
0.043
0.178
0.007
0.457
0.018
2.032
0.08
0.635
0.025
0.66
0.026
0.711
0.028
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 13. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area,
particularly for the drain leads.
The minimum recommended pad pattern shown in
Figure 12 improves the thermal area of the drain
connections (pins 5, 6, 7, 8) while remaining within the
confines of the basic footprint. The drain copper area is
0.0019 sq. in. (or 1.22 sq. mm). This will assist the power
dissipation path away from the device (through the copper
leadframe) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD5903T1 | 功能描述:MOSFET -20V -3A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5903T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET Dual P-Channel ChipFET? |
| NTHD5903T1_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET |
| NTHD5903T1-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Dual P-Channel ChipFET |
| NTHD5903T1G | 功能描述:MOSFET -20V -3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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