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| 型号： | NTJS3157NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 3.2A SOT-363 |
| 产品变化通告： | Product Discontinuation 04/April/2008 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 400mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 500pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 带卷 (TR) |
NTJS3157N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
V GS = 0 V, I D = 250 m A
20
12
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 16 V
T J = 25 ° C
T J = 85 ° C
1.0
5.0
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.40
? 4.0
1.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 4.0 A
45
60
m W
V GS = 2.5 V, I D = 3.6 A
V GS = 1.8 V, I D = 2.0 A
55
70
70
85
Forward Transconductance
g FS
V GS = 10 V, I D = 3.2 A
9.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
500
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 10 V
75
60
Total Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TOT)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V,
I D = 3.2 A
6.9
1.0
1.8
15
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(on)
6.0
15
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DD = 10 V,
I D = 0.5 A, R G = 6.0 W
12
21
11
25
45
25
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS =0 V,
I S = 1.6 A
T J = 25 ° C
0.7
1.0
V
Reverse Recovery Time
t RR
15
ns
Charge Time
Discharge Time
T a
T b
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 1.6 A
12
3.0
Reverse Recovery Charge
Q RR
5.0
nC
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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