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| 型号： | NTLGD3502NT2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 6-DFN |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.3A，3.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 60 毫欧 @ 4.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 10V |
| 功率 - 最大： | 1.74W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-VDFN 裸露焊盘 |
| 供应商设备封装： | 6-DFN（3x3） |
| 包装： | 带卷 (TR) |
NTLGD3502N
MOSFET II ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
Drain-to-Source Breakdown
Voltage
Drain-to-Source Breakdown
Voltage Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, ref to 25 ° C
20
22
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 16 V
T J = 25 ° C
1
m A
T J = 125 ° C
10
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
± 100
nA
On Characteristics (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.6
-2.8
2.0
V
mV/ ° C
Coefficient
Drain-to-Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 3.4 A
70
90
m W
V GS = 2.5 V, I D = 1.7 A
95
120
Forward Transconductance
g FS
V DS = 10 V, I D = 3.4 A
6.7
S
Charges, Capacitances & Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
C ISS
C OSS
C RSS
Q G(TOT)
V GS = 0 V, f = 1 MHz, V DS = 10 V
V GS = 4.5 V, V DS = 10 V; I D = 3.4 A
144
67
22
2.1
275
125
40
5.0
pF
nC
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TH)
Q GS
Q GD
0.11
0.42
0.7
Switching Characteristics, V GS = 4.5 V (Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(ON)
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 16 V,
I D = 3.4 A, R G = 10 W
4.8
13.6
9.0
1.9
10
25
20
5.0
ns
Drain-Source Diode Characteristics
Forward Diode Voltage
V SD
V GS = 0 V, I S = 1.7 A
T J = 25 ° C
0.8
1.15
V
T J = 150 ° C
0.63
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t RR
t a
t b
Q RR
V GS = 0 V, d ISD /d t = 100 A/ m s,
I S = 1.0 A
12
8.0
4.0
5.0
ns
nC
5. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%
6. Switching characteristics are independent of operating junction temperatures
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