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参数资料
| 型号： | NTLJD3183CZTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET COMPL 20V LOW PRO 6WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A，2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 355pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJD3183CZ
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
SINGLE OPERATION (SELF ? HEATED)
Junction ? to ? Ambient – Steady State (Note 3)
R q JA
83
Junction ? to ? Ambient – Steady State Min Pad (Note 4)
Junction ? to ? Ambient – t ≤ 5 s (Note 3)
R q JA
R q JA
177
54
° C/W
DUAL OPERATION (EQUALLY HEATED)
Junction ? to ? Ambient – Steady State (Note 3)
R q JA
58
Junction ? to ? Ambient – Steady State Min Pad (Note 4)
Junction ? to ? Ambient – t ≤ 5 s (Note 3)
R q JA
R q JA
133
40
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm 2 , 2 oz Cu).
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V (BR)DSS
V (BR)DSS /T J
I DSS
N
P
N
P
N
P
V GS = 0 V
Ref to 25 ° C
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 16 V
I D = 250 m A
I D = ? 250 m A
I D = 250 m A
I D = ? 250 m A
T J = 25 ° C
20
? 20
15
13
1.0
? 1.0
V
mV/ ° C
m A
N
P
V GS = 0 V, V DS = 16 V
V GS = 0 V, V DS = ? 16 V
T J = 85 ° C
10
? 10
Gate ? to ? Source Leakage Current
I GSS
N
P
V DS = 0 V, V GS = ± 8.0 V
± 10
± 10
m A
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
N
P
N
P
V GS = V DS
Ref to 25 ° C
I D = 250 m A
I D = ? 250 m A
I D = 250 m A
I D = ? 250 m A
0.4
? 0.4
? 3.0
2.0
1.0
? 1.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
N
V GS = 4.5 V , I D = 2.0 A
34
68
m W
P
N
P
N
P
V GS = ? 4.5 V , I D = ? 2.0 A
V GS = 2.5 V , I D = 2.0 A
V GS = ? 2.5 V, I D = ? 2.0 A
V GS = 1.8 V , I D = 1.7 A
V GS = ? 1.8 V, I D = ? 1.7 A
68
42
90
53
125
100
86
144
120
200
Forward Transconductance
g FS
N
V DS = 5.0 V, I D = 2.0 A
7.0
S
P
V DS = ? 5.0 V , I D = ? 2.0 A
6.5
http://onsemi.com
2
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