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参数资料
| 型号： | NTLJD3183CZTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 描述： | MOSFET COMPL 20V LOW PRO 6WDFN |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 3,000 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A，2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 355pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJD3183CZ
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
N
V DS = 10 V
355
pF
P
V DS = ? 10 V
450
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
N
P
N
f = 1.0 MHz, V GS = 0 V
V DS = 10 V
V DS = ? 10 V
V DS = 10 V
70
90
50
P
V DS = ? 10 V
62
Total Gate Charge
Q G(TOT)
N
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
4.6
7.0
nC
P
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 3.8 A
5.2
7.8
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
N
P
N
P
N
P
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 3.8 A
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 3.8 A
V GS = 4.5 V, V DS = 10 V, I D = 3.8 A
V GS = ? 4.5 V, V DS = ? 10 V, I D = ? 3.8 A
0.3
0.3
0.6
0.84
1.15
1.5
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(ON)
6.2
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
t d(ON)
t r
t d(OFF)
t f
N
P
V GS = 4.5 V, V DD = 5 V,
I D = 2.0 A, R G = 2.0 W
V GS = ? 4.5 V, V DD = ? 5 V,
I D = ? 2.0 A, R G = 2.0 W
5.5
15
14
6.6
9.0
14
12.5
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
N
P
V GS = 0 V, T J = 25 ° C
I S = 1.0 A
I S = ? 1.0 A
0.65
? 0.73
1.0
? 1.0
V
N
P
V GS = 0 V, T J = 125 ° C
I S = 1.0 A
I S = ? 1.0 A
0.55
? 0.62
Reverse Recovery Time
t RR
N
I S = 1.0 A
21
ns
P
I S = ? 1.0 A
23
Charge Time
t a
N
I S = 1.0 A
10.5
Discharge Time
t b
P
N
V GS = 0 V,
dI S / dt = 100 A/ m s
I S = ? 1.0 A
I S = 1.0 A
13
10.5
P
I S = ? 1.0 A
10
Reverse Recovery Charge
Q RR
N
I S = 1.0 A
7.0
nC
P
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
3
I S = ? 1.0 A
10
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