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| 型号： | NTLJF3117PTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.3A 6-WDFN |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 531pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJF3117P
SCHOTTKY DIODE MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Parameter
Symbol
V RRM
V R
I F
Value
30
30
2.0
Unit
V
V
A
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t ≤ 5 s (Note 3)
Junction-to-Ambient – Steady State Min Pad (Note 4)
Symbol
R q JA
R q JA
R q JA
Max
83
54
177
Unit
° C/W
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm 2 , 2 oz Cu.
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = -250 m A
I D = -250 m A, Ref to 25 ° C
-20
9.95
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V DS = -16 V, V GS = 0 V
T J = 25 ° C
T J = 85 ° C
-1.0
-10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = -250 m A
-0.4
-0.7
-1.0
V
Negative Threshold
V GS(TH) /T J
2.44
mV/ ° C
Temperature Coefficient
Drain-to-Source On-Resistance
R DS(on)
V GS = -4.5, I D = -2.0 A
75
100
m W
V GS = -2.5, I D = -2.0 A
V GS = -1.8, I D = -1.6 A
101
150
135
200
Forward Transconductance
g FS
V DS = -5.0 V, I D = -2.0 A
3.1
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
531
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = -10 V
91
56
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = -4.5 V, V DS = -10 V,
I D = -2.0 A
5.5
0.7
1.0
1.4
8.8
6.2
nC
W
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t d(ON)
5.2
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -4.5 V, V DD = -5.0 V,
I D = -1.0 A, R G = 6.0 W
13.2
13.7
19.1
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJF3118N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTLJF3118NTAG | 功能描述:MOSFET NFET 2X2 20V 3.8A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJF3118NTBG | 功能描述:MOSFET NFET 2X2 20V 3.8A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJF4156N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTLJF4156NT1G | 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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