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| 型号： | NTLJF3117PTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.3A 6-WDFN |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 531pF @ 10V |
| 功率 - 最大： | 710mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-WDFN 裸露焊盘 |
| 供应商设备封装： | 6-WDFN（2x2） |
| 包装： | 带卷 (TR) |
NTLJF3117P
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn-On Delay Time
t d(ON)
5.5
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -4.5 V, V DD = -10 V,
I D = -2.0 A, R G = 2.0 W
15
19.8
21.6
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V SD
V GS = 0 V, IS = -1.0 A
T J = 25 ° C
T J = 125 ° C
-0.75
-0.64
-1.0
V
Reverse Recovery Time
t RR
16.2
Charge Time
Discharge Time
Reverse Recovery Time
t a
t b
Q RR
V GS = 0 V, d ISD /d t = 100 A/ m s,
I S = -1.0 A
10.6
5.6
5.7
ns
nC
5. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Maximum Instantaneous
Symbol
V F
Test Conditions
I F = 0.1 A
Min
Typ
0.34
Max
0.39
Unit
V
Forward Voltage
I F = 1.0 A
0.47
0.53
Maximum Instantaneous
Reverse Current
I R
V R = 30 V
V R = 20 V
17
3.0
20
8.0
m A
V R = 10 V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 85 ° C unless otherwise noted)
2.0
4.5
Parameter
Maximum Instantaneous
Symbol
V F
Test Conditions
I F = 0.1 A
Min
Typ
0.22
Max
0.35
Unit
V
Forward Voltage
I F = 1.0 A
0.40
0.50
Maximum Instantaneous
Reverse Current
I R
V R = 30 V
V R = 20 V
0.22
0.11
2.5
1.6
mA
V R = 10 V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 125 ° C unless otherwise noted)
0.06
1.2
Parameter
Maximum Instantaneous
Symbol
V F
Test Conditions
I F = 0.1 A
Min
Typ
0.2
Max
0.29
Unit
V
Forward Voltage
I F = 1.0 A
0.4
0.47
Maximum Instantaneous
Reverse Current
I R
V R = 30 V
V R = 20 V
2.0
1.1
20
10.9
mA
V R = 10 V
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
0.63
8.4
Capacitance
Parameter
Symbol
C
Test Conditions
V R = 5.0 V, f = 1.0 MHz
Min
Typ
38
Max
Unit
pF
7. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
8. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm 2 , 2 oz cu.
9. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
10. Switching characteristics are independent of operating junction temperatures.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTLJF3118N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTLJF3118NTAG | 功能描述:MOSFET NFET 2X2 20V 3.8A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJF3118NTBG | 功能描述:MOSFET NFET 2X2 20V 3.8A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTLJF4156N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTLJF4156NT1G | 功能描述:MOSFET NFET 2X2 30V 4A 70MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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