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| 型号： | NTMD4184PFR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.3A 8-SOIC |
| 产品变化通告： | Wire Change 12/May/2009 |
| 标准包装： | 2,500 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 95 毫欧 @ 3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 360pF @ 10V |
| 功率 - 最大： | 770mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NTMD4184PF
Power MOSFET and
Schottky Diode
-30 V, -4.0 A, Single P-Channel with 20 V,
2.2 A, Schottky Barrier Diode
Features
? FETKY t Surface Mount Package Saves Board Space
? Independent Pin-Out for MOSFET and Schottky Allowing for
http://onsemi.com
?
?
?
Design Flexibility
Low R DS(on) MOSFET and Low V F Schottky to Minimize
Conduction Losses
Optimized Gate Charge to Minimize Switching Losses
This is a Pb-Free Device
V (BR)DSS
-30 V
P-CHANNEL MOSFET
R DS(on) Max
95 m W @ -10 V
165 m W @ -4.5 V
I D Max
-4.0 A
Applications
? Disk Drives
? DC-DC Converters
? Printers
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V R Max
20 V
SCHOTTKY DIODE
V F Max
0.58 V
S
A
I F Max
2.2 A
Rating
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
V DSS
V GS
Value
-30
± 20
Unit
V
V
Continuous Drain
T A = 25 ° C
I D
-3.3
A
G
Current R q JA (Note 1)
T A = 70 ° C
-2.6
Power Dissipation
R q JA (Note 1)
Continuous Drain
T A = 25 ° C
T A = 25 ° C
P D
I D
1.6
-2.3
W
A
D
P-Channel MOSFET
C
Schottky Diode
Current R q JA (Note 2)
Steady
T A = 70 ° C
-1.8
Power Dissipation
State
T A = 25 ° C
P D
0.77
W
MARKING DIAGRAM
R q JA (Note 2)
& PIN ASSIGNMENT
Continuous Drain
Current R q JA t < 10 s
(Note 1)
T A = 25 ° C
T A = 70 ° C
I D
-4.0
-3.2
A
8
C C D D
Power Dissipation
R q JA t < 10 s (Note 1)
Pulsed Drain Current
T A = 25 ° C
T A = 25 ° C,
t p = 10 m s
P D
I DM
2.31
-10
W
A
8
1
SOIC-8
CASE 751
STYLE 18
1
4184PF
AYWW
G
A A S G
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J , T STG
I S
T L
-55 to
+150
-1.3
260
° C
A
° C
4184PF = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
SCHOTTKY MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Peak Repetitive Reverse Voltage
V RRM
20
V
ORDERING INFORMATION
DC Blocking Voltage
V R
20
V
Device
Package
Shipping ?
Average Rectified Forward
Current, (Note 1)
Steady
State
I F
2.2
A
NTMD4184PFR2G
SOIC-8
2500/Tape & Reel
t < 10 s
? Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
3.2
1
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTMD4184PF/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMD4820N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTMD4820NR2G | 功能描述:MOSFET NFET SO8 30V 8A TR 0.020R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMD4840N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.5 A, Dual N−Channel, SOIC−8 |
| NTMD4840NR2G | 功能描述:MOSFET NFET SO8 30V 7.5A 0.034R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMD4884NF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
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